Diffusing Agent Composition for Low-Defect Semiconductor Coating Films
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Solution Overview
Problem
Existing diffusing agent compositions for semiconductor substrates generate a large amount of foreign matter in the coating film, which adversely affects semiconductor elements.
Innovation Solution
A diffusing agent composition comprising an impurity diffusing component with a content of 0% to 1.0% by mass, a solvent with a boiling point of 180°C or higher and a hydrogen bonding force term δH of 14.0 or more, and a solvent mixture that includes a glycol-based solvent, along with an amine compound, to prevent foreign matter generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diffusing agent composition containing an impurity diffusing component and a conventional solvent (such as propylene glycol monomethyl ether acetate or propylene glycol monomethyl ether) is applied to diffuse an impurity into a semiconductor substrate, then the impurity diffusion process can be performed, but a large amount of foreign matter (defects) is generated in the coating film
Solution Approach 1:
The patent changes the key parameters of the solvent system by selecting a solvent with a boiling point of 180°C or higher and a hydrogen bonding force term δH of 14.0 or more. This parameter change in the solvent properties prevents foreign matter generation while maintaining effective impurity diffusion into the semiconductor substrate.
Solution Approach 2:
The patent uses a composite solvent system consisting of multiple solvents, where at least one solvent has specific properties (boiling point ≥180°C and δH ≥14.0). This composite approach combines the benefits of different solvents to achieve both high-quality coating films and effective impurity diffusion.
2Productivity
If the impurity diffusing component content is increased to improve diffusion efficiency, then the diffusion process becomes more effective, but the coating film quality deteriorates due to increased foreign matter generation
Solution Approach 1:
The patent optimizes the content of the impurity diffusing component to be 0.01 wt% or more and 1.0 wt% or less, and changes the solvent parameters (boiling point ≥180°C, δH ≥14.0) to enable effective diffusion at lower concentrations without generating foreign matter, thus resolving the contradiction between diffusion efficiency and coating quality.
3Ease of manufacture
If a solvent with lower boiling point is used to facilitate easy evaporation and coating film formation, then the coating process becomes simpler, but foreign matter is generated in the coating film
Solution Approach 1:
The patent changes the boiling point parameter of the solvent to 180°C or higher, which prevents foreign matter generation during evaporation. The controlled evaporation of this high-boiling-point solvent enables simple coating processes while maintaining high film quality without foreign matter contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively prevents the formation of foreign matter in the coating film, ensuring a stable and uniform film formation process for semiconductor substrates.
Implementation Method 1
a hydrogen bonding force term δH of a Hansen solubility parameter of the solvent (S1) is 14.0 or more
Implementation Method 2
diffusing the impurity diffusing component (A) in the diffusing agent composition into the semiconductor substrate
Data Source
AI summary
A diffusing agent composition capable of preventing generation of foreign matter in a coating film to be formed, and a method for manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition includes an impurity diffusing component; and a solvent, in which a content of the impurity diffusing component is more than 0% by mass and 1.0% by mass or less, the solvent (S) includes a first solvent and a second solvent different from the first solvent, a boiling point of the first solvent under atmospheric pressure is 180° C. or higher, a hydrogen bonding force term δH of a Hansen solubility parameter of the first solvent is 14.0 or more, and a content of the first solvent is more than 0.10% by mass with respect to a mass of the solvent.