Diffusion Barrier Coated Metal Substrates for Semiconductor Devices
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Solution Overview
Problem
Metal foil substrates in semiconductor devices undergo diffusion of metal atoms at elevated temperatures, compromising the electrical properties of semiconductor layers due to high diffusivity of atoms like iron and chromium, leading to issues such as degraded threshold voltage, subthreshold slope, leakage current, and on-current.
Innovation Solution
A diffusion barrier layer, comprising materials like titanium nitride or aluminum nitride, is deposited on the metal substrate to prevent metal atom diffusion into semiconductor layers, formed by techniques such as physical vapor deposition or atomic layer deposition, ensuring adequate thickness and adhesion to maintain device integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If metal foil substrates are used for high-temperature processing, then the substrate can withstand elevated temperatures, but metal atoms diffuse into semiconductor layers degrading electrical properties
Solution Approach 1:
A diffusion barrier layer comprising titanium nitride and aluminum nitride is deposited on the metal foil substrate to act as an intermediary between the metal substrate and semiconductor layers. This barrier layer prevents metal atom diffusion into the semiconductor layers while allowing the substrate to withstand high-temperature processing, thereby resolving the contradiction between temperature resistance and electrical property maintenance.
2Reliability
If diffusion barrier layer is deposited on metal substrate, then metal atom diffusion is prevented, but device structure becomes more complex
Solution Approach 1:
The diffusion barrier layer is formed as a composite structure comprising both titanium nitride and aluminum nitride materials. This composite approach provides effective diffusion barrier properties while maintaining a relatively simple layered structure that can be integrated into existing semiconductor device architectures, thus preventing metal atom diffusion without excessively increasing structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diffusion barrier effectively reduces metal atom diffusivity by several orders of magnitude, maintaining the electrical properties of semiconductor devices and preventing undesirable changes in device characteristics during high-temperature processing.
Implementation Method 1
deposited on the metal substrate by known deposition techniques, such as physical vapor deposition
Implementation Method 2
such as physical vapor deposition or atomic layer deposition
Data Source
AI summary
Devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The devices include a metal substrate, a diffusion barrier layer on the metal substrate, one or more insulator layers on the diffusion barrier layer, and an antenna and/or inductor on the one or more insulator layer(s). The method includes forming a diffusion barrier layer on the metal substrate, forming one or more insulator layers on the diffusion barrier layer; and forming an antenna and/or inductor on an uppermost one of the insulator layer(s). The antenna and/or inductor is electrically connected to at least one of the diffusion barrier layer and/or the metal substrate. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into device layers formed thereon.