Diffusion Break Structure for Isolated Active Regions Under Stress
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Solution Overview
Problem
The formation of diffusion break structures in semiconductor devices can alter stress distribution in active regions, leading to performance deterioration and complicate the fabrication process, especially when electrical isolation is required.
Innovation Solution
The implementation of single or double diffusion break structures, including insulating patterns and openings, over an insulating layer between active regions, which provides electrical isolation and maintains stress levels to improve transistor performance without the need for additional wiring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diffusion break structures are formed to provide electrical isolation between active regions, then electrical isolation is improved, but stress distribution in active regions is undesirably changed leading to performance deterioration
Solution Approach 1:
The patent applies local quality by creating a diffusion break structure with specific local characteristics - an insulating layer with a recess portion that exposes the semiconductor substrate only in the region where electrical isolation is needed, while maintaining the stress distribution in the active regions. The recess portion is selectively formed to provide insulation locally without affecting the stress state of the transistor active regions.
Solution Approach 2:
The diffusion break structure is segmented into distinct portions: an insulating layer covering the semiconductor substrate, and a recess portion that selectively exposes the substrate. This segmentation allows the structure to fulfill multiple functions - providing electrical isolation through the insulating layer while maintaining proper stress distribution by exposing the substrate in specific areas where stress needs to be preserved.
2Reliability
If diffusion break structures are implemented with wiring for electrical isolation, then electrical isolation is achieved, but the fabrication process becomes relatively complicated
Solution Approach 1:
The patent merges the electrical isolation function with the diffusion break structure itself, eliminating the need for separate wiring. The recess portion in the insulating layer directly provides the isolation barrier between adjacent active regions, combining what would traditionally require additional wiring layers into a single integrated structure formed during the standard fabrication process.
Solution Approach 2:
The patent extracts the wiring function from the diffusion break structure by using the recess portion to directly provide electrical isolation. Instead of adding separate wiring layers for isolation, the design removes material to create an exposed substrate region that inherently provides the isolation barrier, simplifying the overall device structure and fabrication process.
Data Source
AI summary
A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening.