Diffusion Break Patterns for Transistor Stress and Insulation
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Solution Overview
Problem
Existing semiconductor devices face challenges in optimizing the electrical performance of transistors due to the lack of effective stress application and insulation methods for active fins, which affects the characteristics and efficiency of NMOS and PMOS transistors.
Innovation Solution
The semiconductor device employs a first diffusion break pattern of oxide for NMOS regions and a second diffusion break pattern of nitride for PMOS regions, applying tensile and compressive stresses respectively, to improve the electrical performance by dividing active fins into pieces aligned in a specific direction and ensuring proper contact with conductive structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diffusion break pattern is formed to provide electrical insulation between standard cells, then electrical insulation is improved, but the active fin is removed and transistor characteristics are degraded
Solution Approach 1:
The diffusion break pattern is segmented into multiple parts: a first diffusion break pattern (DBP1) that divides the active fin into pieces, and a second diffusion break pattern (DBP2) that provides additional insulation. This segmentation allows the insulation function to be distributed across multiple structures, reducing the impact on any single transistor while maintaining overall electrical isolation between standard cells.
Solution Approach 2:
The conductive structure serves as an intermediary element that contacts both the active fins and the diffusion break patterns. This intermediary structure helps manage the electrical insulation requirements while maintaining proper stress application to the active fins, resolving the conflict between insulation and transistor characteristics.
2Reliability
If stress is applied to active fins to improve transistor characteristics, then electrical performance is improved, but the complexity of the diffusion break pattern increases
Solution Approach 1:
Different regions of the semiconductor device are assigned different diffusion break patterns with specific properties: DBP1 is configured to apply tensile stress to NMOS active fins, while DBP2 is configured to apply compressive stress to PMOS active fins. This local differentiation allows optimized stress application for each transistor type without requiring a uniformly complex structure across the entire device.
Solution Approach 2:
The first and second diffusion break patterns are designed with asymmetric configurations tailored to their respective transistor types. DBP1 has a structure optimized for tensile stress application to NMOS devices, while DBP2 has a different structure optimized for compressive stress application to PMOS devices. This asymmetric design allows each pattern to efficiently achieve its specific stress application function with minimal complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the electrical performance of transistor channels by applying targeted stresses, improving the characteristics and efficiency of both NMOS and PMOS transistors.
Implementation Method 1
a tensile stress and a compression stress may be applied to channels of an NMOS transistor and a PMOS transistor, respectively
Implementation Method 2
a tensile stress and a compression stress may be applied to channels of an NMOS transistor and a PMOS transistor, respectively
Implementation Method 3
active fins of an NMOS region may be separated and electrically insulated by a first diffusion break pattern formed of an oxide
Implementation Method 4
active fins of a PMOS region may be separated and electrically insulated by a second diffusion break pattern formed of a nitride
Data Source
AI summary
A semiconductor device may include active fins each of which extends in a first direction on a substrate, the active fins being spaced apart from each other in a second direction different from the first direction, a conductive structure extending in the second direction on the substrate, the conductive structure contacting the active fins, a first diffusion break pattern between the substrate and the conductive structure, the first diffusion break pattern dividing a first active fin of the active fins into a plurality of pieces aligned in the first direction, and a second diffusion break pattern adjacent to the conductive structure on the substrate, the second diffusion break pattern having an upper surface higher than a lower surface of the conductive structure, and dividing a second active fin of the active fins into a plurality of pieces aligned in the first direction.