Diffusion Plate Hole Layout for Uniform Wafer Release Film Etching

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Solution Overview

Problem

As semiconductor devices continue to shrink in size, achieving uniformity in etch processes across the wafer surface becomes increasingly challenging due to the varying topography and complexity of features, leading to inefficiencies and reduced yield in semiconductor package formation.

Innovation Solution

A treatment system with a showerhead having a diffusion plate with varying hole densities and blocking dividers is used to ensure uniform distribution of treatment plasma across the wafer, facilitating uniform etching of release films and improving the efficiency and yield of semiconductor package formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional etch processes are used on wafers with varying topography, then processing can be performed, but uniformity of etching across the wafer surface deteriorates

Engineering Contradiction:
Improveetch uniformityVSAvoidwafer topography complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The diffusion plate incorporates concentric rings with varying hole densities, where inner rings have lower hole densities and outer rings have higher hole densities. This local variation in hole distribution compensates for the non-uniform plasma flow patterns caused by wafer topography, ensuring uniform etching across the entire wafer surface despite varying device complexity and topography

Inventive Principle:
Principle #3Local quality

2Productivity

If feature size is reduced to improve integration density, then more components can be integrated, but etch uniformity deteriorates due to varying topography

Engineering Contradiction:
Improveintegration densityVSAvoidetch uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The diffusion plate uses concentric rings with progressively varying hole densities to address local topography variations caused by high-density component integration. The varying hole distribution locally compensates for topography effects, maintaining etch uniformity even as integration density increases and feature sizes decrease

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invention transitions from a simple uniform hole pattern to a multi-dimensional concentric ring structure with varying hole densities. This dimensional complexity in the diffusion plate design enables compensation for topography variations, allowing high integration density to be achieved while maintaining etch uniformity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system achieves uniform etching of release films across the wafer, enhancing the efficiency and yield of semiconductor package formation by ensuring consistent precursor material distribution and etch rates across the wafer surface.

Implementation Method 1

flowing an etchant through a diffusion plate within a treatment chamber, the diffusion plate comprising concentric rings separated by dividers, the concentric rings comprising a first concentric ring of holes, a second concentric ring of holes, and a third concentric ring of holes

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 2

performing a treatment process to remove the release film from the semiconductor wafer, the treatment process comprising: flowing an etchant through a diffusion plate

Methodology Applied
Scientific EffectChemical etching:

Data Source

PatentUS12564008B2Method and treatment system for uniform processing of semiconductor devices
Publication Date: 2026.02.24 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12564008B2 patent drawing
  • US12564008B2 patent drawing
  • US12564008B2 patent drawing

AI summary

A method includes attaching a carrier to a semiconductor wafer using a release film; removing the carrier from the semiconductor wafer; and performing a treatment process to remove the release film from the semiconductor wafer, the treatment process comprising: flowing an etchant through a diffusion plate within a treatment chamber, the diffusion plate comprising concentric rings separated by dividers, the concentric rings comprising a first concentric ring of holes, a second concentric ring of holes, and a third concentric ring of holes, each of the concentric rings having a different hole density; and performing a cleaning process on the semiconductor wafer.