Diffusion Prevention Layer Blocks Hydrogen in Flexible Display Panels

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Solution Overview

Problem

Flexible display panels face defects due to hydrogen diffusion from barrier layers into thin film transistors, and high-temperature dehydration processes can deform plastic substrates, leading to manufacturing challenges.

Innovation Solution

A method involving a flexible substrate with a barrier layer to prevent impurities, a diffusion prevention layer composed of metal oxide and reduced metal to block hydrogen, and a buffer layer to protect pixels, all formed without a high-temperature dehydration process, ensuring pixel integrity and substrate stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a barrier layer is used to prevent impurities from the flexible substrate, then substrate protection is improved, but hydrogen diffusion into thin film transistors occurs causing defects

Engineering Contradiction:
Improveimpurity migration from substrateVSAvoidhydrogen diffusion from barrier layer
Core Design Contradiction:
Object-affected harmful factorsVSObject-generated harmful factors

Solution Approach 1:

A diffusion prevention layer comprising metal oxide and metal reduced from the metal oxide is introduced as an intermediary between the barrier layer and the thin film transistor. This intermediate layer specifically blocks hydrogen diffusion while allowing the barrier layer to continue preventing impurity migration from the flexible substrate.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The diffusion prevention layer is formed as a composite structure containing both metal oxide and metal reduced from the metal oxide. This composite material configuration provides enhanced hydrogen blocking capability compared to single-material layers, addressing the hydrogen diffusion issue while maintaining compatibility with the existing barrier layer structure.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If a high-temperature dehydration process is used to remove moisture, then manufacturing completeness is improved, but plastic substrate deformation occurs

Engineering Contradiction:
Improvedehydration process completionVSAvoidsubstrate shape stability
Core Design Contradiction:
Ease of manufactureVSShape

Solution Approach 1:

The manufacturing process parameters are changed by eliminating the high-temperature dehydration step entirely. Instead, the patent employs low-temperature processing methods that achieve sufficient moisture removal without subjecting the plastic substrate to temperatures that cause deformation, thus maintaining substrate shape stability.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The harmful high-temperature dehydration process is extracted and removed from the manufacturing sequence. The patent achieves effective moisture management through alternative lower-temperature processes, eliminating the source of substrate deformation while maintaining manufacturing effectiveness.

Inventive Principle:
Principle #2Taking out (Extraction)

3Device complexity

If the barrier layer is placed directly on the flexible substrate, then manufacturing simplicity is improved, but pixel reliability deteriorates due to hydrogen diffusion

Engineering Contradiction:
Improvelayer structure complexityVSAvoidpixel performance stability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The diffusion prevention layer serves as a mediating structure between the barrier layer and the thin film transistor. This additional layer, while increasing structural complexity, is specifically designed to block hydrogen diffusion pathways, thereby significantly improving pixel reliability without requiring complete redesign of the existing architecture.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The protective layering structure is segmented into functionally distinct layers: the barrier layer for impurity prevention, the diffusion prevention layer for hydrogen blocking, and the buffer layer for additional protection. This segmentation allows each layer to perform its specific function optimally, improving overall pixel reliability through specialized protection mechanisms.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces defects by preventing hydrogen diffusion and avoids substrate deformation, maintaining pixel performance and substrate integrity during manufacturing.

Implementation Method 1

a diffusion prevention layer disposed between the barrier layer and the buffer layer and configured to prevent hydrogen generated from the barrier layer from being diffused into the thin film transistor

Methodology Applied
Scientific EffectHydrogen diffusion: Diffusion

Implementation Method 2

a barrier layer disposed on the plastic substrate and configured to prevent an impure substance from the plastic substrate from migrating

Methodology Applied
Scientific EffectImpurity migration prevention: Diffusion Barrier

Data Source

PatentUS9608238B2Display panel including multilayer diffusion barrier
Publication Date: 2017.03.28 SAMSUNG DISPLAY CO LTD
  • US9608238B2 patent drawing
  • US9608238B2 patent drawing
  • US9608238B2 patent drawing

AI summary

Disclosed is a display panel including: a flexible substrate; a buffer layer disposed on the flexible substrate; a pixel disposed on the buffer layer and comprising a thin film transistor and an image device connected to the thin film transistor; a barrier layer disposed on the flexible substrate to protect the pixel from a substance from the flexible substrate; and a diffusion prevention layer disposed between the barrier layer and the buffer layer and configured to prevent hydrogen generated from the barrier layer from being diffused into the thin film transistor.