Diffusion Prevention Spacer for Semiconductor Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In integrated circuits, the scaling of interconnect technology to smaller sizes makes it difficult to produce robust and complete areas of dielectric material surrounding FAV interconnect structures, leading to voids and plasma damage that cause diffusion of capping and liner materials into dielectric materials, resulting in shorting and breakdown.
Innovation Solution
Forming spacers near the top of interconnect recesses to create a physical barrier between capping and liner materials and dielectric materials, elongating the migration path and preventing diffusion during subsequent fabrication processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If interconnect technology is scaled to smaller sizes, then device density and integration are improved, but the ability to produce robust and complete areas of dielectric material surrounding FAV interconnect structures deteriorates, leading to voids and plasma damage
Solution Approach 1:
The spacer is formed in advance before the capping and liner materials are deposited. This preliminary structure creates a physical barrier that prevents diffusion of materials into the dielectric, addressing the manufacturing precision issue before the harmful diffusion process can occur.
Solution Approach 2:
The spacer acts as an intermediary physical barrier between the capping/liner materials and the dielectric material. By introducing this intermediate structure, the patent prevents direct contact and diffusion pathways, resolving the contradiction between scaling and dielectric integrity.
2Reliability
If spacers are formed to prevent diffusion, then reliability is improved, but device complexity increases
Solution Approach 1:
The interconnect structure is segmented into distinct regions by the spacer, which divides the space between the interconnect and dielectric material. This segmentation creates clear boundaries that prevent material diffusion while maintaining a relatively simple overall structure.
Solution Approach 2:
The spacer serves as a simple intermediary element that provides the necessary diffusion barrier function without requiring complex multi-layer structures or additional processing steps, thus improving reliability with minimal increase in device complexity.
3Reliability
If the migration path is elongated by forming spacers, then diffusion prevention is improved, but manufacturing process complexity increases
Solution Approach 1:
The spacer is formed as a preliminary structure before subsequent material deposition steps. By establishing the diffusion barrier early in the process, the patent elongates the migration path and prevents diffusion without requiring complex retroactive modifications to the fabrication process.
Solution Approach 2:
The spacer introduces a simple intermediary structure that physically elongates the diffusion path between capping/liner materials and dielectric material. This single structural addition provides effective diffusion prevention without necessitating complex multi-step process modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents the diffusion of capping and liner materials into dielectric materials, enhancing the reliability and integrity of interconnect structures by maintaining a staggered interface that inhibits migration paths, thus improving the quality of the fill and reducing voids in dielectric material.
Implementation Method 1
forming spacers near the top of interconnect recesses to create a physical barrier between capping and liner materials and dielectric materials
Implementation Method 2
elongating the migration path and preventing diffusion during subsequent fabrication processes
Data Source
AI summary
A method of making a semiconductor component includes forming an interconnect in a dielectric layer such that an uppermost surface of the interconnect is substantially coplanar with an uppermost surface of the dielectric layer. The method further includes recessing the dielectric layer such that the uppermost surface of the dielectric layer is lower than the uppermost surface of the interconnect. The method further includes forming spacers in direct contact with the uppermost surface of the recessed dielectric layer such that the spacers are in direct contact with the interconnect. The method further includes recessing the interconnect such that the uppermost surface of the interconnect remains above the uppermost surface of the recessed dielectric layer and is lower than an uppermost surface of the spacers.