Multi-Contacted Diffusion Resistance Modeling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current techniques for modeling the resistance of multi-contacted diffusion regions in semiconductor devices result in significant errors due to neglecting wire resistance and asymmetric contact placements, leading to inaccurate representation of electric current flow paths.
Innovation Solution
A method and system for modeling the resistance of a multi-contacted diffusion region by developing a formula that accounts for wire resistance, contact resistance, and electric current flow from each partition, with iteratively adjusted or analytically optimized dividing line positions to minimize total parasitic resistance, using a computer-implemented approach.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If current techniques are used to model the resistance of multi-contacted diffusion regions, then the modeling process is simple, but the accuracy of resistance modeling deteriorates due to neglecting wire resistance and asymmetric contact placements
Solution Approach 1:
The diffusion region is divided into multiple partitions, each associated with a specific contact. This segmentation allows the model to account for asymmetric current distribution and wire resistance effects in each partition, improving accuracy while maintaining computational tractability through structured decomposition
Solution Approach 2:
The patent applies different resistance parameters and current distribution characteristics to different partitions of the diffusion region. Each partition is modeled with local properties including contact resistance, wire resistance, and diffusion resistance specific to that region, enabling accurate representation of asymmetric contact placements and current flow paths
2Reliability
If wire resistance and asymmetric contact placements are neglected in the modeling, then the modeling process is simpler, but the representation of electric current flow paths becomes inaccurate
Solution Approach 1:
The total resistance is segmented into distinct components: wire resistance for each contact, contact resistance at each contact point, and diffusion resistance within each partition. This segmentation allows systematic inclusion of all relevant resistance sources without creating an intractable complex formula
Solution Approach 2:
The patent merges multiple resistance components (wire resistance, contact resistance, diffusion resistance) and current distribution effects into a unified resistance model. The combined model accurately represents total parasitic resistance while maintaining a structured form suitable for computational implementation
Data Source
AI summary
Disclosed are embodiments of a method and program storage device for modeling the resistance of a multi-contacted diffusion region of a semiconductor device, such as a metal oxide semiconductor field effect transistor (MOSFET), a metal oxide semiconductor capacitor (MOS capacitor), a bipolar transistor, etc. The embodiments provide a formula for determining the total parasitic resistance (Rtot) of the diffusion region based on a sum of contributions of wire resistance, contact resistance, diffusion resistance and electric current flow from each of multiple partitions of the diffusion region. This formula allows the position of each dividing line separating adjacent partitions (i.e., between adjacent contacts) to be arbitrary. The embodiments adjust the position of each dividing line to minimize the total parasitic resistance (Rtot). This minimized total parasitic resistance (Rtot) value can then be used to more accurately model semiconductor device performance.