Digital Output Driver Using Thin-Oxide FETs for Cost-Effective Voltage Translation

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Solution Overview

Problem

There is a need for a digital output driver that can interface with higher I/O voltages using thin-oxide FETs to reduce manufacturing costs by avoiding the additional masks required for thick-oxide FETs, while maintaining performance and ensuring reliable voltage translation between core and pad supply voltages.

Innovation Solution

A digital output driver and input buffer design utilizing thin-oxide FETs, comprising a pre-driver and driver with a latch and latch driver, and including multiple N-FETs and P-FETs stacked together, with specific voltage ranges and gate control circuits to manage supply voltages and prevent voltage leakage, allowing for efficient level shifting and signal buffering.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thick-oxide FETs are used to interface with higher I/O voltages, then voltage handling capability is improved, but manufacturing cost increases due to additional masks

Engineering Contradiction:
Improvevoltage handling capabilityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the operating parameters of thin-oxide FETs by implementing a multi-stage voltage translation architecture. The pre-driver stage translates voltages from VCORE to VPAD, and the driver stage further translates to the external I/O voltage level. This parameter transformation allows thin-oxide FETs to handle higher voltages indirectly without requiring thick-oxide devices, thereby avoiding additional manufacturing masks while maintaining voltage handling capability

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces intermediate voltage translation stages (pre-driver and driver circuits) as mediators between the low-voltage thin-oxide FET core and the high-voltage external I/O interface. These intermediary circuits translate voltage levels progressively, allowing thin-oxide FETs to interface with higher voltages without direct exposure, thus eliminating the need for thick-oxide FETs and their associated additional masks

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If thin-oxide FETs are used for I/O interfacing, then manufacturing cost is reduced by avoiding additional masks, but voltage handling capability deteriorates

Engineering Contradiction:
Improvemanufacturing costVSAvoidvoltage handling capability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent segments the voltage translation function into multiple independent stages: the pre-driver stage handles translation from VCORE to VPAD, while the driver stage handles translation to the external I/O voltage level. Each stage uses thin-oxide FETs operating within their safe voltage ranges, collectively achieving high-voltage interfacing capability without requiring any single thin-oxide FET to exceed its rating, thus maintaining both cost efficiency and voltage handling capability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent adds a temporal dimension to voltage handling by using controlled timing sequences in the multi-stage translation process. The pre-driver stage operates first to establish intermediate voltage levels, then the driver stage operates subsequently to achieve the final high voltage level. This sequential, time-based approach allows thin-oxide FETs to handle higher voltages indirectly through staged translation, maintaining manufacturing cost efficiency while achieving the required voltage handling capability

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS7605618B2Digital output driver and input buffer using thin-oxide field effect transistors
Publication Date: 2009.10.20 QUALCOMM INC
  • US7605618B2 patent drawing
  • US7605618B2 patent drawing
  • US7605618B2 patent drawing

AI summary

A digital output driver includes a pre-driver and a driver that may be implemented with thin-oxide FETs. The pre-driver generates first and second digital signals based on a digital input signal. The first digital signal has a first voltage range determined by a first (e.g., pad) supply voltage and an intermediate voltage. The second digital signal has a second voltage range determined by a second (e.g., core) supply voltage and circuit ground. The driver receives the first and second digital signals and provides a digital output signal having a third voltage range determined by the first supply voltage and circuit ground. The pre-driver may include a latch and a latch driver. The latch stores the current logic value for the digital input signal. The latch driver writes the logic value to the latch. The latch driver is enabled for a short time duration to write the logic value and is turned off afterward.