Digital Projection Temperature Control for Plasma Substrates
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Solution Overview
Problem
Temperature control in plasma processing systems is challenging due to local differences in substrate temperature leading to non-uniform etch or deposition rates, affecting the precision of semiconductor fabrication processes.
Innovation Solution
A plasma processing system with a dual heating mechanism, including a digital projection system that projects a pattern of electromagnetic radiation onto the substrate support assembly, allowing for precise spatial and dynamic temperature control, and a first heating mechanism within the substrate support assembly for direct heating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple heaters are embedded within the substrate holder to control temperature, then the substrate temperature can be adjusted, but the temperature control precision is insufficient due to the large area of individual heaters compared to the small features being etched
Solution Approach 1:
The patent segments the heating function into multiple independently controllable heating zones within the substrate holder. Each zone can be controlled separately to create specific temperature profiles across the substrate surface, enabling precise local temperature control that matches the scale of features being processed rather than using a single large heater.
Solution Approach 2:
The patent implements local quality by allowing different regions of the substrate holder to have different temperatures through independently controlled heating zones. This enables creating localized temperature variations that correspond to the spatial distribution of features on the substrate, providing temperature control precision at the scale of individual features rather than uniform heating across the entire substrate.
2Manufacturing precision
If a single temperature control approach is used across the entire substrate, then the system is simple to operate, but non-uniform temperature distribution leads to non-uniform etch or deposition rates
Solution Approach 1:
The substrate holder is divided into multiple heating zones that can be independently controlled, allowing the system to create non-uniform temperature profiles when needed. This segmentation enables precise control of temperature distribution across different regions of the substrate, ensuring uniform processing results even with complex spatial temperature requirements.
Solution Approach 2:
The heating zones can be dynamically adjusted during processing to change temperature profiles as needed. The system can transition between uniform and non-uniform temperature distributions by activating or deactivating specific heating zones, providing adaptive temperature control that optimizes processing uniformity for different patterns and features on the substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables uniform or biased temperature control across the substrate, correcting non-uniform critical dimensions and improving the precision of plasma processing by creating hundreds of temperature adjustment regions per centimeter squared, thereby enhancing the uniformity of etching or deposition processes.
Implementation Method 1
The digital projection system is configured to project the pattern of electromagnetic radiation within a predetermined wavelength range of electromagnetic radiation that passes through semiconductor material as transparent. The substrate support assembly comprises an absorption material that absorbs electromagnetic radiation within the predetermined wavelength range to spatially and selectively augment heating of the substrate by each projected point location.
Implementation Method 2
A first heating mechanism is positioned within the substrate support assembly and configured to heat a substrate when supported on the substrate support assembly. The substrate support assembly comprises an absorption material that absorbs electromagnetic radiation within the predetermined wavelength range to spatially and selectively augment heating of the substrate by each projected point location.
Implementation Method 3
Fabrication of integrated circuits (IC) in the semiconductor industry typically employs plasma processing to create and assist surface chemistry necessary to remove material from and deposit material to a substrate within a plasma processing chamber. In general, such plasma processing apparatus form plasma under vacuum conditions by flowing a process gas into a processing chamber and heating electrons to energies sufficient to sustain ionizing collisions.
Data Source
AI summary
Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.