Dinaphthothiophene Derivative for High Mobility Organic Transistors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Organic semiconductor materials in existing technologies have poor solubility in solvents, making it difficult to prepare inks and forming homogeneous films, which limits their practical application in printing processes and requires complex post-deposition treatments for high mobility.
Innovation Solution
A dinaphthothiophene derivative with specific substituent-position structure is developed, exhibiting excellent solubility and enabling high mobility films through a simple wet film formation method like drop-casting, and used to create an organic semiconductor material, ink, and transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional organic semiconductor materials are used, then mobility can be improved to exceed amorphous silicon, but solubility in solvents deteriorates making it difficult to prepare inks and form homogeneous films
Solution Approach 1:
The patent modifies the molecular structure parameters of organic semiconductor materials by introducing specific substituents (alkyl groups, alkoxy groups, aryl groups) at designated positions of the core skeleton. These parameter changes enhance solubility in common solvents while preserving the high mobility property, enabling the material to be processed into inks for film formation without compromising semiconductor performance
Solution Approach 2:
The patent creates composite molecular structures by combining a core skeleton (such as dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene or related frameworks) with various functional substituents. This composite approach allows the material to simultaneously exhibit high mobility from the core structure and good solubility from the substituent groups, resolving the contradiction between these two properties
2Ease of manufacture
If wet film formation methods are used, then ease of manufacture improves, but film homogeneity deteriorates due to molecular orientation disorder and partial crystallization
Solution Approach 1:
The patent optimizes the molecular parameters of the semiconductor material by selecting substituents with appropriate lengths and positions (e.g., alkyl groups at specific positions on the core skeleton) that prevent excessive crystallization and molecular aggregation during wet processing. This parameter optimization maintains molecular orientation order and film homogeneity even when using simple drop-casting or inkjet printing methods without requiring complex post-deposition treatments
Solution Approach 2:
The patent enables the use of simple, inexpensive wet film formation methods (such as drop-casting or inkjet printing) that do not require expensive equipment or complex multi-step processes. By designing materials that inherently maintain homogeneity during these simple processes, the patent eliminates the need for costly vacuum deposition equipment or sophisticated post-processing facilities
3Reliability
If high mobility is achieved through complicated film-formation methods, then mobility improves, but device complexity increases
Solution Approach 1:
The patent extracts and eliminates the need for complicated post-deposition treatment processes (such as annealing, solvent vapor treatment, or multi-step annealing sequences) by incorporating processability-enhancing substituents directly into the molecular structure. This allows high mobility to be achieved through simple drop-casting or inkjet printing followed by basic drying, removing unnecessary process steps and reducing overall device fabrication complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dinaphthothiophene derivative allows for the production of organic semiconductors with high mobility using a straightforward drop-casting method, overcoming solubility issues and simplifying the fabrication of organic transistors.
Implementation Method 1
The organic semiconductor material in the related art has poor solubility in a solvent, and thus it is difficult to prepare an ink
Implementation Method 2
a method of drop-casting and drying of ink droplets
Data Source
Figure 1~2
AI summary
Provided are a compound which is excellent in solubility in a solvent and easily provides a film exhibiting high mobility without complicated processes, an organic semiconductor material using the same, and an organic semiconductor ink which enables easy fabrication of an organic transistor composed of a practical configuration. The problems are solved by a method of producing a dinaphthothiophene derivative, the method including the following steps (I) and (II): (I) a first step of subjecting a naphthol derivative represented by General Formula (A) and a naphthalene thiol derivative represented by General Formula (B) to dehydration condensation in the presence of acid to produce a sulfide derivative represented by General formula (C); and (II) a second step of performing dehydrogenation reaction of the sulfide derivative (C) in the presence of a transition metal salt or a transition metal complex to produce a dinaphthothiophene derivative (D).