Dinuclear Ruthenium Complex for Stable CVD Vaporization

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Solution Overview

Problem

Existing ruthenium thin film deposition methods face challenges with raw materials having high melting points, low thermal stability, and impurity issues due to solid state at normal temperature, leading to unstable vaporization and decomposition during film formation.

Innovation Solution

A dinuclear ruthenium complex with bridge-coordinated carbonyl and nitrogen-containing organic ligands is developed, which has a low melting point and moderate thermal stability, allowing for stable vaporization and high-purity ruthenium thin film formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If existing ruthenium complexes are used as chemical vapor deposition raw materials, then high-purity ruthenium thin films can be formed, but the raw materials have high melting points and are solid at normal temperature, causing unstable vaporization and decomposition during film formation

Engineering Contradiction:

Improvethin film purityVSAvoidvaporization stability

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent modifies the physical and chemical parameters of the ruthenium complex by changing the ligand structure from conventional options to specific nitrogen-containing organic ligands (pyridine, pyrimidine, triazole types). This parameter change results in a lower melting point (below 100°C) while maintaining the ability to form high-purity films, thus resolving the contradiction between film purity and vaporization stability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite coordination structure where ruthenium is coordinated with a specific combination of carbonyl ligands and nitrogen-containing organic ligands. This composite ligand system achieves optimal balance between thermal stability (for reliable vaporization) and decomposition characteristics (for high-purity film formation), solving both requirements simultaneously

Inventive Principle:

Principle #40Composite materials

2Quantity of substance

If existing ruthenium complexes are used, then metal concentration in raw material is increased due to metal-metal bonds, but thermal stability is insufficient as compounds decompose concurrently with melting

Engineering Contradiction:

Improvemetal concentrationVSAvoidthermal stability

Core Design Contradiction:

Quantity of substanceVSStability of the object's composition

Solution Approach 1:

The patent changes the ligand type parameter from conventional ligands to nitrogen-containing organic ligands (pyridine, pyrimidine, triazole types), which fundamentally alters the thermal behavior of the complex. This parameter change enables the complex to maintain structural integrity at higher temperatures, achieving thermal stability that prevents decomposition during the vaporization process while preserving the high metal concentration benefit

Inventive Principle:

Principle #35Parameter changes

3Manufacturing precision

If raw materials with high melting points are used, then high-purity films can be formed, but the raw materials must be dissolved in organic solvents, causing impurity ingress and harmfulness

Engineering Contradiction:

Improvethin film purityVSAvoidsolvent impurity and combustibility

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The invention changes the melting point parameter of the raw material by selecting specific nitrogen-containing organic ligands, reducing it below 100°C. This enables the raw material to be in liquid state at normal temperature, allowing direct use without organic solvents, thereby eliminating solvent-related impurities and safety hazards while maintaining film formation capability

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dinuclear ruthenium complex enables the formation of high-purity ruthenium thin films with improved thermal stability and reduced impurity incorporation, suitable for both CVD and ALD methods, and is effective in forming films at lower temperatures with reduced resistance.

Implementation Method 1

chemical vapor deposition raw material including a dinuclear ruthenium complex, which is used for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method such as a CVD method

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

a ligand is easily released as a gas during decomposition

Methodology Applied

Scientific EffectThermal decomposition: Pyrolysis

Data Source

PatentUS10815260B2Chemical vapor deposition raw material including dinuclear ruthenium complex and chemical deposition method using chemical vapor deposition raw material

Publication Date: 2020.10.27 TANAKA KIKINZOKU KOGYO KK

AI summary

The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (1): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices.