Semiconductor Diode Back Surface Resistance Layer Thermal Management
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Solution Overview
Problem
Semiconductor diodes with integrated resistors face challenges in high thermal overload, cost-intensive production, and electromagnetic compatibility issues due to peak current fluctuations, leading to increased assembly complexity and material consumption in power supply systems.
Innovation Solution
A semiconductor diode design featuring a resistance layer on its back surface that acts as an integrated resistor, covering the entire back surface and providing sufficient thermal capacity, using materials like silicon or carbon with high thermal capacity, which reduces the need for discrete resistors and minimizes peak current issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a multi-layer polysilicon resistor structure is used to provide thermal protection, then thermal overload protection is improved, but the surface area and production cost increase significantly
Solution Approach 1:
The patent merges the resistor function with the semiconductor body by integrating a resistance layer directly into the back surface of the semiconductor body. This eliminates the need for separate multi-layer polysilicon resistor structures, thereby reducing surface area while maintaining thermal protection functionality through the integrated resistance layer that dissipates peak currents.
Solution Approach 2:
The patent extracts the resistor function from a separate multi-layer structure and integrates it directly into the semiconductor body as a resistance layer. This extraction simplifies the overall structure, reduces the required surface area, and eliminates the complexity of alternating conductive and insulating layers while preserving the thermal overload protection function.
2Reliability
If a multi-layer polysilicon resistor structure is used to provide thermal protection, then thermal overload protection is improved, but production complexity and cost increase
Solution Approach 1:
The patent combines the resistor functionality with the semiconductor body fabrication process by integrating a resistance layer during the same production steps. This merging eliminates the need for separate multi-layer polysilicon structures and their associated complex assembly operations, thereby reducing production complexity and cost while maintaining thermal protection.
Solution Approach 2:
The patent extracts the resistor function from a complex separate multi-layer structure and integrates it into the semiconductor body using standard production techniques. This extraction simplifies the production process by eliminating alternating conductive and insulating layers, reducing assembly operations, and lowering overall production complexity and cost.
3Object-affected harmful factors
If discrete resistors are added in series with boot-strap diodes to limit peak current, then electromagnetic compatibility is improved, but assembly complexity and material consumption increase
Solution Approach 1:
The patent merges the current-limiting resistor function with the semiconductor diode by integrating a resistance layer into the back surface. This integration eliminates the need for separate discrete resistors connected in series with boot-strap diodes, thereby reducing assembly complexity and material consumption while maintaining electromagnetic compatibility through controlled peak current limitation.
Solution Approach 2:
The patent extracts the current-limiting function from separate discrete resistors and integrates it directly into the semiconductor body as a resistance layer. This extraction eliminates the need for additional assembly operations and external components, simplifying the overall device structure while preserving electromagnetic compatibility by limiting peak currents flowing through boot-strap diodes.
4Reliability
If discrete power resistors are used to handle peak current pulses, then peak current limitation is improved, but cost and space requirements increase
Solution Approach 1:
The patent merges the peak current limitation function with the semiconductor diode structure by integrating a resistance layer into the back surface. This integration eliminates the need for separate discrete power resistors, thereby reducing space requirements and material consumption while maintaining reliable peak current limitation capability within the compact semiconductor structure.
Solution Approach 2:
The patent extracts the peak current limitation function from separate discrete power resistors and integrates it directly into the semiconductor body. This extraction reduces the required space by eliminating external components and their mounting requirements, while maintaining the ability to handle peak current pulses through the integrated resistance layer with sufficient thermal capacity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances thermal management, reduces production costs, and mitigates electromagnetic compatibility problems by integrating a resistor within the semiconductor diode, allowing for efficient heat dissipation and stable operation under high pulse loads.
Implementation Method 1
providing an integrated resistor... materials like silicon or carbon with high thermal capacity... efficient heat dissipation
Implementation Method 2
materials like silicon or carbon with high thermal capacity... efficient heat dissipation
Data Source
AI summary
A semiconductor diode with integrated resistor has a semiconductor body with a front surface, a back surface and a diode structure with an anode electrode and a cathode electrode. A resistance layer arranged on the back surface of the semiconductor body provides the integrated resistor.