Diode Buffer Cell Layout for Antenna Effect Protection
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Solution Overview
Problem
The antenna effect in semiconductor devices, where charge accumulation in long wiring during etching processes can lead to insulation breakdown and leak currents, poses a challenge in ensuring reliable semiconductor device operation.
Innovation Solution
A semiconductor device design that incorporates a diode buffer cell with integrated diode and buffer functions, utilizing impurity regions and gate wirings to prevent charge accumulation and facilitate easy routing, thereby addressing the antenna effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate diode cell and buffer cell are used to prevent antenna effect, then charge blocking function is achieved, but device complexity and routing complexity increase
Solution Approach 1:
The patent combines the diode cell and buffer cell into a single integrated cell structure. The diode is formed using impurity regions (first and second impurity regions) within the same cell that contains the gate wiring and buffer transistor, eliminating the need for separate diode and buffer cells. This integration maintains the charge blocking function while reducing routing complexity and device complexity.
Solution Approach 2:
The integrated cell structure serves multiple functions simultaneously: the impurity regions form a diode for charge blocking, while the same cell contains gate wirings and buffer transistors for signal buffering. This multi-functional design eliminates the need for separate dedicated diode cells and buffer cells, reducing overall device complexity.
2Reliability
If diode cell is properly placed to block charge flow, then antenna effect is prevented, but manufacturing complexity increases
Solution Approach 1:
The diode structure is merged with the buffer cell structure, sharing common elements such as gate wirings, impurity regions, and substrate connections. This integration allows the diode to be manufactured alongside the buffer transistor using the same fabrication processes, reducing manufacturing complexity compared to separately fabricating and placing discrete diode cells.
Data Source
AI summary
A semiconductor device comprises a first wiring that receives an input signal and extends in a first direction, a first gate wiring that extends in a second direction that intersects the first direction, a first impurity region disposed on one side of the first gate wiring and is connected to the first wiring, a second impurity region disposed on an other side of the first gate wiring and is connected to the first wiring, a second gate wiring that extends in the second direction and is spaced apart from the first gate wiring in the first direction and is connected to the first wiring, and a first inverter that includes the second gate wiring and is connected to the first wiring through which the inverter receives the input signal.