Diode Doped Regions for Neutralizing Dielectric-Attracted Electrons
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Solution Overview
Problem
The fabrication of diode structures in semiconductor integrated circuits (ICs) can lead to the presence of positively charged particles within dielectric structures, attracting electrons and causing performance degradation in diodes.
Innovation Solution
The implementation of charge potential equivalence control (CPEC) structures, which include extra electrical interconnection structures and P-type doped regions, to prevent positively charged plasma from entering the IC device and to attract and neutralize electrons that would otherwise congregate near the dielectric structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If diode structures are fabricated in semiconductor ICs, then functional density increases, but positively charged particles enter dielectric structures and attract electrons causing performance degradation
Solution Approach 1:
A charge potential equivalence control (CPEC) structure is introduced as an intermediary between the dielectric structure and the electron-rich region. The CPEC structure includes a conductive layer with controlled charge potential that acts as a mediator to prevent electrons from being attracted to positively charged particles in the dielectric, thereby resolving the performance degradation issue while maintaining high functional density
Solution Approach 2:
The CPEC structure is configured in advance to create a charge potential barrier that counteracts the attractive force between positively charged particles in the dielectric and electrons. By establishing this preliminary protective mechanism, the patent prevents electron congregation near the dielectric structure before performance degradation can occur
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CPEC structures effectively prevent the entry of positively charged plasma and reduce the number of electrons attracted to the dielectric structure, thereby improving the performance and reliability of diode structures in ICs.
Implementation Method 1
P-type doped regions... to attract and neutralize electrons that would otherwise congregate near the dielectric structure
Data Source
AI summary
A diode is formed in an active region. The diode includes a P-type component embedded in a first portion of the active region, an N-type component embedded in a second portion of the active region, and an undoped component disposed between the P-type component and the N-type component. An interconnect structure is formed over a first side of the diode. Different portions of the interconnect structure are electrically coupled to the P-type component and the N-type component, respectively. One or more openings are etched through a dielectric structure disposed over a second side of the diode opposite the first side. A dopant material is implanted into the active region through the one or more openings. The one or more openings are filled with a conductive material.