Protective Diode Laser Fuse Layout for Plasma Charge Discharge
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Solution Overview
Problem
Plasma-induced electrical charge accumulation during semiconductor fabrication can compromise transistor properties, leading to damage in memory cells or logic gates, and existing protective diodes cause inaccuracies in testing and leakage issues.
Innovation Solution
Incorporating a protective diode connected to a laser fuse that is blown post-fabrication to provide a discharge path, eliminating the need for electrical fuses and reducing wiring overhead.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective diode is connected to an electrical fuse, then electrostatic discharge protection is provided, but wiring overhead increases and chip real estate is consumed
Solution Approach 1:
The patent extracts the fuse element from the protective circuit by using a laser fuse that is blown through the substrate after fabrication. This removes the need for dedicated fuse wiring and connections, reducing wiring overhead while maintaining ESD protection functionality through the laser-blown opening in the substrate.
Solution Approach 2:
The patent moves the fuse operation from the circuit plane to the substrate thickness dimension by creating a laser-blown opening through the substrate. This three-dimensional approach eliminates the need for planar fuse wiring and reduces chip real estate consumption while maintaining the protective function.
2Reliability
If a protective diode is connected to an electrical fuse, then electrostatic discharge protection is provided, but chip real estate is consumed
Solution Approach 1:
The patent extracts the fuse element from the circuit plane and implements it as a laser-blown opening through the substrate. This extraction eliminates the need for dedicated fuse wiring and connections, reducing chip real estate consumption while maintaining ESD protection functionality.
Solution Approach 2:
The patent utilizes the substrate thickness dimension to implement the fuse function through a laser-blown opening, converting a two-dimensional circuit problem into a three-dimensional solution. This approach minimizes chip real estate usage while providing effective electrostatic discharge protection.
3Productivity
If plasma-induced electrical charge accumulates on wafer features, then fabrication processes can be completed, but transistor properties are compromised and memory cells or logic gates are damaged
Solution Approach 1:
The patent applies preliminary anti-action by providing electrostatic discharge protection circuits and laser fuse mechanisms before plasma-induced damage can compromise transistor properties. The protective diodes and laser fuse openings are pre-configured to prevent charge accumulation damage during fabrication processes.
Solution Approach 2:
The patent converts the harmful plasma-induced electrical charge into a beneficial discharge path through the laser-blown opening in the substrate. The opening provides a controlled pathway for electrostatic discharge, transforming potential damage into a protective mechanism that safeguards transistor properties during fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively mitigates plasma-induced damage and electrostatic discharge, ensuring accurate testing and reliable transistor operation while minimizing chip real estate usage.
Implementation Method 1
a laser fuse configured to, upon receiving a laser pulse via an opening, break an electrical path of the protective diode and the device under test
Implementation Method 2
break an electrical path
Implementation Method 3
protective diode connected to a laser fuse that is blown post-fabrication to provide a discharge path
Implementation Method 4
protective diode
Data Source
AI summary
A semiconductor device includes a device under test, and a protection circuit electrically connected to the device under test, the protection circuit including: a protective diode, and a laser fuse configured to, upon receiving a laser pulse via an opening, break an electrical path of the protective diode and he device under test.