Diode Metal Atomic Layer Reduces Forward Voltage Drop
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Solution Overview
Problem
Existing power devices using vertical structure Schottky diodes on insulating substrates face high forward voltage drops due to voltage drops between semiconductor layers and substrates, and the stripping processes for light-emitting diodes are costly and inefficient.
Innovation Solution
A diode structure featuring a high N-type doped substrate with a metal atomic layer and an epitaxial structure, including N-type and P-type semiconductor layers, where the metal atomic layer reduces the potential barrier for electron conduction and eliminates the need for a stripping process, thereby minimizing forward conduction voltage drops and improving manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a vertical structure Schottky diode is used on a conductive substrate, then the current capacity is improved, but the forward voltage drop increases due to voltage drop between semiconductor layer and substrate
Solution Approach 1:
An insulating layer is introduced as an intermediary between the conductive substrate and the semiconductor layer. This insulating layer eliminates the parasitic voltage drop that occurs at the direct contact interface between semiconductor and conductive substrate, thereby reducing the overall forward voltage drop while maintaining the high current capacity enabled by the vertical structure
Solution Approach 2:
The device structure combines multiple materials with different properties: conductive substrate for mechanical support and electrical connection, insulating layer for electrical isolation and voltage drop reduction, and semiconductor layers for active diode function. This composite structure resolves the contradiction by leveraging the strengths of each material while mitigating their individual weaknesses
2Reliability
If a stripping process is used to remove the substrate for light-emitting diode preparation, then the device performance is improved, but the manufacturing cost and complexity increase
Solution Approach 1:
The functional semiconductor layer is extracted and transferred to a new support substrate, separating the active device component from the original growth substrate. This allows the original substrate to be reused for subsequent growth cycles while the extracted layer forms the final high-performance device, eliminating costly stripping processes
Solution Approach 2:
Instead of discarding the expensive substrate after device fabrication, the substrate is recovered and reused for growing additional semiconductor layers. The original substrate serves as a reusable template, significantly reducing manufacturing costs and waste while maintaining device quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diode structure significantly reduces forward conduction voltage drops and simplifies the manufacturing process by eliminating the stripping step, leading to cost savings and improved efficiency.
Implementation Method 1
the first electrode is in Schottky contact with the epitaxial structure
Implementation Method 2
the second electrode is in ohmic contact with the first substrate
Implementation Method 3
the metal atomic layer reduces the potential barrier for electron conduction
Data Source
AI summary
Disclosed are a diode and a manufacturing method thereof. The diode includes: a first substrate, the first substrate being an N-type doped substrate with a doping concentration equal to or greater than 1×1018 cm−3; a metal atomic layer located on a first surface of the first substrate; an epitaxial structure located on the metal atomic layer; a first electrode located on the epitaxial structure; and a second electrode located on a second surface, opposite to the first surface, of the first substrate. The diode significantly reduces forward conduction voltage drop.