Diode-Selected Anti-Fuse Array for High-Voltage Programming Reliability
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Solution Overview
Problem
Existing anti-fuse units in DRAM chips face reliability issues due to high programming voltages, which can damage selection transistors and require thicker gate oxide layers, limiting miniaturization and increasing complexity.
Innovation Solution
Incorporating a diode in place of the selection transistor, allowing the anti-fuse unit to be connected with a bit line and word line, enabling programming and reading while eliminating the need for a thick gate oxide layer, thus simplifying the structure and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high programmed voltage is used to break down the gate oxide layer for programming, then the anti-fuse unit can reach a programmed state, but the selection transistor may be damaged and the gate oxide layer requires to be thicker
Solution Approach 1:
The patent extracts the selection transistor from the anti-fuse unit structure and replaces it with a diode. This removes the vulnerable component that required thick gate oxide for protection, thereby reducing device complexity while maintaining programming reliability through the diode's inherent high-voltage tolerance
Solution Approach 2:
The patent changes the electrical parameters of the selection element by using a diode instead of a transistor. The diode's different voltage-current characteristics allow it to withstand high programming voltages without requiring protective thick gate oxide, thus resolving the contradiction between programming reliability and device complexity
2Reliability
If the gate oxide layer is made thicker to protect against high programming voltage, then the selection transistor reliability is improved, but the device dimension increases and miniaturization is limited
Solution Approach 1:
By removing the selection transistor and replacing it with a diode, the patent eliminates the need for thick protective gate oxide, thereby reducing the vertical dimension of the device and enabling further miniaturization while maintaining reliability
Solution Approach 2:
The diode serves as a simpler, more robust replacement that doesn't require the same level of protection as a transistor. This substitution allows the use of thinner gate oxide layers, reducing device dimension and enabling scaling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for reliable programming and reading of anti-fuse units with reduced dimensions and complexity, enhancing the reliability and compactness of the anti-fuse array.
Implementation Method 1
a first aspect of the disclosure provides an anti-fuse unit, including an anti-fuse device and a diode; an anode of the anti-fuse device is electrically connected with a bit line, a cathode of the anti-fuse device is electrically connected with an anode of the diode, and a cathode of the diode is electrically connected with a word line
Implementation Method 2
When the DRAM chip is repaired, a high programmed voltage is used to break down the gate oxide layer, so that an anti-fuse unit reaches a programmed state
Data Source
AI summary
An anti-fuse unit and an anti-fuse array. The anti-fuse unit includes an anti-fuse device and a diode. An anode of the anti-fuse device is electrically connected with a bit line, a cathode of the anti-fuse device is electrically connected with an anode of the diode, and a cathode of the diode is electrically connected with a word line.