On-Chip Diode Temperature Sensor Using Reverse Bias Discharge
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Solution Overview
Problem
Modern semiconductor devices face challenges in thermal monitoring due to increased heat dissipation and temperature gradients across chips, leading to reliability issues and power consumption problems with existing temperature sensing technologies, which require high currents and occupy significant area.
Innovation Solution
A temperature sensing device utilizing a diode selectively reverse-biased by a charging voltage, where the temperature is determined by the discharge rate of the diode after the charging voltage is uncoupled, allowing for minimal power and area usage through the measurement of reverse bias current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional temperature sensing circuitry using base-emitter voltage difference is used, then temperature sensing capability is achieved, but power consumption and area occupancy increase due to high current requirements
Solution Approach 1:
The patent changes the operating parameter from forward bias voltage difference to reverse bias current characteristics. By utilizing the reverse bias current of the diode, which has a stronger temperature dependence, the sensor achieves accurate temperature measurement without requiring high currents, thus reducing power consumption while maintaining measurement precision
Solution Approach 2:
The patent replaces the voltage-based sensing mechanism with a current-based mechanism. Instead of measuring voltage differences that require amplification circuits, the invention directly measures reverse bias current characteristics, eliminating the need for complex amplification stages and reducing both power consumption and area occupancy
2Measurement precision
If voltage difference sensing is used, then temperature measurement is possible, but area occupancy increases due to amplification circuit requirements
Solution Approach 1:
The patent substitutes the voltage measurement approach with a current measurement approach. By measuring reverse bias current directly, the need for voltage amplification circuits is eliminated, significantly reducing the area occupancy while preserving temperature measurement capability
Solution Approach 2:
The patent extracts and utilizes the reverse bias current characteristic of the diode as the sensing mechanism. This extraction of the temperature-dependent current property allows for direct measurement without requiring additional amplification circuitry, thereby reducing the overall sensor area
3Reliability
If multiple temperature sensors are distributed across the chip, then thermal monitoring coverage is improved, but area occupancy and power consumption increase
Solution Approach 1:
The patent changes the sensing parameter to reverse bias current, which provides higher temperature sensitivity per unit area. This allows for more effective thermal monitoring coverage with fewer sensors distributed across the chip, reducing the total area occupancy while improving reliability
Solution Approach 2:
The patent utilizes the strong temperature dependence of reverse bias current to achieve effective thermal monitoring with minimal sensor instances. By leveraging the excessive temperature sensitivity of the reverse bias mechanism, the system achieves comprehensive thermal coverage with fewer sensors than traditional methods would require
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient and precise thermal monitoring with reduced power consumption and area occupancy, effectively addressing the challenges of heat dissipation and reliability in semiconductor devices.
Implementation Method 1
A temperature sensing device is provided which utilizes reverse bias current of a diode
Data Source
AI summary
A method and apparatus for determining a temperature of a semiconductor device is provided herein. One aspect of the disclosed subject matter is seen in a temperature sensing device. The temperature sensing device comprises a diode and a circuit. The diode is adapted to be reverse biased by a charging voltage applied thereto. The circuit determines a temperature of the diode based on a rate that the voltage on the diode discharges in response to the charging voltage being uncoupled from the diode.