Diode Transistor Guard Active Area Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration of semiconductor devices is limited due to the need for protection elements, which reduces the degree of freedom in layout design and increases the risk of damage to gate electrodes during manufacturing processes.
Innovation Solution
A semiconductor device is designed with a guard active area and diode transistors that connect to gate structures, allowing for the protection of transistors and maintaining the integration of semiconductor elements by preventing gate structure collapse during subsequent processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If protection elements are added to protect semiconductor elements during manufacturing processes, then reliability is improved, but device complexity increases and degree of integration is reduced
Solution Approach 1:
The patent combines the protection element (diode) and the transistor into a single integrated structure. The diode transistor includes a first active area, second active area, and gate structure that functions as both a protection diode and a transistor. This merging eliminates the need for separate protection elements while maintaining protection functionality, thereby improving reliability without increasing device complexity or reducing degree of integration.
2Reliability
If protection elements are added to protect semiconductor elements during manufacturing processes, then reliability is improved, but the degree of freedom in layout design is reduced
Solution Approach 1:
By merging the diode and transistor into a single diode transistor structure, the patent eliminates the need for separate protection element placement in the layout. The diode transistor can be positioned within the existing transistor layout without requiring additional dedicated space for protection elements, thereby maintaining reliability while preserving layout design freedom and flexibility.
3Reliability
If separate diodes are used to protect transistors, then reliability is improved, but manufacturing precision requirements increase due to additional alignment steps
Solution Approach 1:
The diode transistor is formed as a single integrated structure with the transistor, sharing common manufacturing steps and alignment references. The first active area, second active area, and gate structure are formed simultaneously or in an integrated sequence, eliminating the need for separate alignment steps between discrete diodes and transistors. This reduces manufacturing precision requirements while maintaining gate electrode protection reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the degree of integration and freedom in layout design while effectively preventing damage to gate electrodes, allowing for a higher number of semiconductor elements to be integrated in a limited area.
Implementation Method 1
configured to pass a current generated by plasma ions to the substrate
Data Source
AI summary
A semiconductor device includes a guard active area formed in a substrate, a plurality of transistors disposed in an element area adjacent to the guard active area, each of the transistors including an active area and a gate structure crossing the active area, and a diode transistor disposed between a first transistor and a second transistor among the transistors, and having a diode gate structure connected to the guard active area, a first active area connected to a gate structure of the first transistor, and a second active area connected to a gate structure of the second transistor.