Dirac Material FET With Source Control Electrode
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Solution Overview
Problem
Conventional MOS FETs are limited by a sub-threshold swing of 60 mV/Dec, restricting the operating voltage and power consumption of integrated circuits, while tunnel transistors achieve this but with low drive current and negative capacitance transistors suffer from slow speed and instability.
Innovation Solution
A field effect transistor with a source control electrode that uses Dirac materials, where the source and channel are doped oppositely, and a gate insulated from the channel, allowing for a sub-threshold swing less than 60 mV/Dec with improved drive current and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If tunnel transistors are used to achieve sub-threshold swing less than 60 mV/Dec, then the turn-off speed is improved, but the drive current is greatly reduced
Solution Approach 1:
The transistor is segmented into two independent control mechanisms: gate control for turn-off speed (sub-threshold swing) and source control electrode for drive current. This allows each control element to optimize its function without compromising the other, resolving the contradiction between fast turn-off and high drive current.
Solution Approach 2:
The source control electrode acts as an intermediary element that independently modulates the source region doping state, serving as a mediator between the gate control and the channel. This intermediary enables separate optimization of turn-off characteristics and drive current, breaking the traditional coupling between these parameters.
2Power
If negative capacitance transistors are used to achieve sub-threshold swing below 60 mV/Dec and high drive currents, then the drive current is improved, but the speed and stability deteriorate
Solution Approach 1:
The control functions are segmented between gate (for speed) and source control electrode (for current), eliminating the need for ferroelectric materials that cause slow switching. This segmentation allows achieving both high drive current and fast switching speed simultaneously.
Solution Approach 2:
The invention changes the control parameter from voltage-only (gate) to combined voltage and doping control (gate + source control electrode). By dynamically adjusting the source region doping state through the source control electrode, the transistor achieves high drive current without the stability and speed penalties of negative capacitance transistors.
3Reliability
If conventional MOS FETs are used, then the stability is maintained, but the sub-threshold swing is limited to 60 mV/Dec
Solution Approach 1:
The source control electrode introduces dynamic control over the source region doping state, transforming the static source region into a dynamically adjustable component. This dynamic capability enables sub-threshold swing below 60 mV/Dec while maintaining stability through controlled doping modulation rather than complex structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed transistor achieves a sub-threshold swing of less than 60 mV/Dec at room temperature with a similar on-state current to conventional transistors, enabling reduced power consumption and faster switching speeds.
Implementation Method 1
a source control electrode disposed on the source and for controlling doping of the Dirac material such that the Dirac material and the channel are doped in an opposite manner
Data Source
AI summary
A field effect transistor, a method of manufacturing the field effect transistor, and an electronic device are provided, wherein the field effect transistor comprises: a source(105) formed of a Dirac material(103) and a drain(107); a channel(102) disposed between the source(105) and the drain(107); and a source control electrode(108) disposed on the source(105) and for controlling the doping of the Dirac material(103) such that the Dirac material(103) and the channel(102) are doped in an opposite manner; and a gate(106) disposed on the channel(102) and electrically insulated from the channel(102).