Direct-Bonded Semiconductor Die Packaging Without Die-Attach Materials
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Solution Overview
Problem
Existing semiconductor device packages face challenges with the uniformity, performance, and reliability of die-attach materials, which can lead to anomalies and failures such as deformation, delamination, and increased costs due to the use of precious metals.
Innovation Solution
The implementation of a direct bonding process, specifically ultrasonic bonding, to attach a semiconductor die directly to a submount without the use of die-attach materials, ensuring a strong and reliable electrical and thermal connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If die-attach materials are used to attach semiconductor die to submount, then electrical and thermal connection is achieved, but uniformity and reliability are compromised due to deformation and delamination
Solution Approach 1:
The patent removes die-attach materials from the bonding interface between semiconductor die and submount. By extracting this intermediate layer, the invention eliminates the source of deformation and delamination while maintaining electrical and thermal connection through direct metallization-to-submount bonding.
Solution Approach 2:
The patent uses metallization layers as an intermediary bonding interface instead of traditional die-attach materials. The metallization layer on the semiconductor die bonds directly to the submount, providing both electrical connectivity and mechanical attachment without the reliability issues of organic or epoxy attach materials.
2Reliability
If precious metals are used in die-attach materials, then electrical connection is improved, but cost increases significantly
Solution Approach 1:
The patent replaces expensive precious metals in die-attach materials with cost-effective metallization layers that are integral to the semiconductor die structure. This substitution maintains electrical connection quality while dramatically reducing material costs by eliminating the need for additional precious metal layers.
Solution Approach 2:
The metallization layer serves multiple functions simultaneously: it provides electrical connection, thermal conduction, and mechanical bonding support. This multi-functionality eliminates the need for separate expensive die-attach materials, reducing overall cost while maintaining performance.
3Ease of manufacture
If traditional die-attach process is used, then semiconductor die can be attached to submount, but manufacturing complexity and cost increase
Solution Approach 1:
The patent combines the die-attach function with the existing metallization structure of the semiconductor die. By merging these functions, the invention eliminates separate die-attach material deposition and curing steps, simplifying the manufacturing process while maintaining attachment feasibility.
Solution Approach 2:
The patent removes die-attach materials and associated application, curing, and inspection processes from the manufacturing workflow. This extraction of unnecessary steps reduces manufacturing complexity and cost while preserving the essential attachment functionality through direct metallization bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the risk of anomalies and failures associated with die-attach materials, lowers the overall cost of semiconductor device packages, and enhances the reliability and performance of the semiconductor device packages by eliminating the need for costly precious metals and reducing the complexity of the manufacturing process.
Implementation Method 1
The implementation of a direct bonding process, specifically ultrasonic bonding, to attach a semiconductor die directly to a submount
Data Source
AI summary
Semiconductor device packages are provided. In one example, the semiconductor device package includes a semiconductor die. The semiconductor die includes a wide bandgap semiconductor material. The semiconductor die includes a metallization layer on a surface of the semiconductor die. The semiconductor device package includes a submount. The metallization of the semiconductor die is directly bonded to the submount.