Direct-Bonded Die Structures for Thermal Dissipation
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Solution Overview
Problem
Efficient thermal dissipation remains an issue for microelectronic elements, particularly in densely packed or stacked structures, where heat generated by active components is trapped by dielectric bonding materials, leading to potential damage and reduced performance.
Innovation Solution
Implementing direct bonding techniques that eliminate dielectric bonding materials where not necessary, and using conductive vias or dummy dies made of semiconductor materials to create vertical thermal pathways for heat dissipation, along with hybrid bonding to form strong chemical bonds between elements without adhesives.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If dielectric bonding materials are used to bond dies, then strong chemical bonds and robust connections are achieved, but heat dissipation is impeded due to thermal insulation
Solution Approach 1:
The bonding structure is segmented into distinct functional zones: dielectric bonding materials are applied only to peripheral regions for mechanical bonding, while central regions use direct semiconductor-to-semiconductor bonding to create thermal pathways. This segmentation allows simultaneous achievement of strong bonds and effective heat dissipation.
Solution Approach 2:
Different bonding approaches are applied to different regions of the die: peripheral areas use dielectric materials for mechanical support and bonding strength, while central active areas use direct bonding without dielectric layers to maintain thermal conductivity. This local differentiation resolves the contradiction between bond strength and heat dissipation.
2Reliability
If dielectric bonding materials are used to facilitate bonding, then robust connections are achieved, but heat generated by components is trapped
Solution Approach 1:
Dielectric bonding materials are extracted or removed from regions where they would impede heat dissipation. By eliminating dielectric layers in thermal pathways and using only necessary minimum elsewhere, the structure maintains connection reliability while preventing heat trapping that would occur with comprehensive dielectric coverage.
Solution Approach 2:
Direct semiconductor-to-semiconductor bonds act as intermediaries that simultaneously provide mechanical connection and thermal conduction. This intermediary bonding approach replaces dielectric materials in critical thermal pathways, allowing heat to pass through the bond interface without being trapped by insulating materials.
3Temperature
If direct bonding techniques are used to eliminate dielectric materials, then heat dissipation is improved, but bonding complexity increases
Solution Approach 1:
Direct bonding techniques are applied partially - only in regions where heat dissipation is critical. Peripheral regions continue to use conventional dielectric bonding for mechanical support. This partial application of direct bonding achieves thermal management goals without requiring complete process overhaul, thus limiting complexity increases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances heat dissipation by reducing thermal insulation and creating effective pathways for heat removal, preventing damage to microelectronic elements and maintaining performance.
Implementation Method 1
a thermal pathway can be built into the bonded structures of microelectronic elements... a heat dissipative die can be directly bonded to a second region of the microelectronic element to carry heat away from the microelectronic element
Implementation Method 2
heat generated by active components is trapped by dielectric bonding materials
Data Source
AI summary
Disclosed is a bonded structure including an element with a bonding surface, the bonding surface having a dielectric region and a first semiconductor region laterally spaced from the dielectric region. The bonded structure further includes a first die directly bonded to the dielectric region of the element without an intervening adhesive. The bonded structure further includes a second die having a second bonding surface having a second semiconductor region, the second semiconductor region being bonded to the first semiconductor region of the element without an intervening adhesive and without an intervening deposited dielectric material.