Direct-Bonded Inductor Regions for Fine-Pitch Microelectronic Assemblies

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Solution Overview

Problem

Conventional integrated circuit (IC) packages using solder-based attach technologies are limited by low achievable pitch, which precludes the use of fine pitches required for next-generation devices, and fail to efficiently conduct high current without mechanical failure.

Innovation Solution

The use of direct bonding techniques between microelectronic components and an organic interposer, which eliminates the need for solder and anisotropic conductive materials, allowing for metal-to-metal or hybrid bonding with elevated pressures and temperatures to form reliable conductive interfaces capable of handling higher currents.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If solder-based attach technologies are used, then mechanical bonding is achieved, but pitch is limited and current handling capability is insufficient

Engineering Contradiction:
Improvecurrent handling capabilityVSAvoidpitch
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the bonding parameters by transitioning from solder-based attachment to direct metal-to-metal bonding with controlled pressure and temperature. This parameter change enables both finer pitch (improved manufacturing precision) and better current handling capability (improved reliability) simultaneously, resolving the technical contradiction.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the solder-based mechanical bonding system with a direct metal-to-metal bonding system. This substitution eliminates the limitations of solder pitch and current handling by using elevated pressure and temperature to create direct conductive bonds, achieving both finer pitch and superior electrical performance.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If direct bonding with elevated pressure and temperature is used, then ultra-fine pitch is achieved, but process complexity increases

Engineering Contradiction:
ImprovepitchVSAvoidbonding process
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by preparing the bonding surfaces in advance with specific metallization layers and surface treatments. This pre-preparation enables the subsequent direct bonding process to achieve ultra-fine pitch without excessive complexity, as the surfaces are already optimized for direct metal-to-metal bonding.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The direct bonding process serves multiple functions simultaneously: it creates mechanical attachment, establishes electrical connectivity, and achieves ultra-fine pitch alignment. This multi-functionality reduces overall process complexity compared to separate steps for each function.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the achievement of ultra-fine pitches and supports the design of sophisticated die complexes with improved power delivery and signaling performance, overcoming the limitations of conventional solder-based interconnects.

Implementation Method 1

electrical signals and power are passed between the package substrate and the die through the wirebonds or solder

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

metal-to-metal or hybrid bonding with elevated pressures and temperatures to form reliable conductive interfaces

Methodology Applied
Scientific EffectThermal bonding: Diffusion Welding

Data Source

PatentUS12107060B2Microelectronic assemblies with inductors in direct bonding regions
Publication Date: 2024.10.01 INTEL CORP
  • US12107060B2 patent drawing
  • US12107060B2 patent drawing
  • US12107060B2 patent drawing

AI summary

Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.