Direct-Bonded Optical Element Assembly for LED Chip Alignment
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Solution Overview
Problem
The existing methods for assembling optical elements on radiation-emitting semiconductor chips are expensive, time-consuming, and complex, especially when high positioning accuracy is required.
Innovation Solution
A radiation-emitting semiconductor device with a semiconductor body and an optical element attached via a direct bonding connection, which eliminates the need for adhesive layers and allows for high-precision assembly of multiple devices simultaneously, using a carrier and auxiliary bonding layers for mechanical stabilization and efficient production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical elements are individually assembled on radiation-emitting semiconductor chips, then high positioning accuracy can be achieved, but the process becomes expensive, time-consuming, and complex
Solution Approach 1:
The patent merges the semiconductor chip and optical element into a single integrated component during the epitaxial growth process. The optical element is formed directly on the semiconductor substrate in the same manufacturing process, eliminating the need for separate assembly steps while maintaining high positioning accuracy through precise control of the growth process parameters
Solution Approach 2:
The optical element is prepared and positioned on the semiconductor substrate during the epitaxial growth process itself, before the chip is completed. This preliminary integration ensures precise positioning is built into the structure from the beginning, avoiding the need for complex post-assembly alignment procedures
2Ease of manufacture
If adhesive layers are used to attach optical elements, then assembly is simplified, but absorption losses increase and reliability decreases
Solution Approach 1:
The patent completely removes the adhesive layer from the structure by forming the optical element directly on the semiconductor substrate during epitaxial growth. This extraction of the adhesive layer eliminates the source of absorption losses and bonding reliability issues while maintaining ease of manufacture through the integrated growth process
Solution Approach 2:
The semiconductor substrate itself serves as the intermediary between the optical element and the chip structure. By using the substrate as the direct bonding interface instead of an adhesive layer, the patent achieves both mechanical stability and optical transparency without introducing lossy intermediate materials
3Adaptability or versatility
If multiple devices are assembled individually, then each device can be optimized, but production efficiency and accuracy decrease
Solution Approach 1:
The patent uses epitaxial growth to create multiple semiconductor chips with integrated optical elements on a single large substrate. Each chip can be individually optimized and separated later, but the initial mass production on the substrate enables high efficiency. This segmentation approach allows both individual device optimization and high-volume production
Solution Approach 2:
Multiple semiconductor chips with their respective optical elements are grown and integrated simultaneously on a single substrate during the epitaxial process. This merging of multiple devices into a single manufacturing run dramatically improves production efficiency while maintaining the ability to individually optimize each chip's parameters during the growth process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of semiconductor devices with improved radiation properties and high accuracy, reducing costs and complexity while maintaining reliability over a wide temperature range.
Implementation Method 1
The optical element is formed to be directly connected to the semiconductor body. In the case of a direct bonding connection, the connecting partners to be connected to one another, which are in particular prefabricated, are held together by atomic and/or molecular forces, in particular by means of hydrogen bonds and/or Van der Waals interactions.
Implementation Method 2
the connecting partners to be connected to one another, which are in particular prefabricated, are held together by atomic and/or molecular forces, in particular by means of hydrogen bonds and/or Van der Waals interactions
Implementation Method 3
The auxiliary bonding layer is expediently formed to be transmissive to the radiation to be generated in the active region, for example with a transmission of at least 90% or at least 95%
Implementation Method 4
the active region is intended to generate electromagnetic radiation in the ultraviolet, visible or infrared spectral range
Data Source
AI summary
A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection.Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.