Direct Bonded Semiconductor Structure for Void-Free Interfaces
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Solution Overview
Problem
Current methods for forming bonded structures in semiconductor elements often result in voids and non-uniform bonding waves due to warpage and curvature, leading to electrical signal disruptions and reduced manufacturing yield.
Innovation Solution
The direct bonding of semiconductor elements using non-conductive dielectric-to-dielectric bonding techniques without adhesives, combined with surface roughening and activation processes, such as plasma treatment, to enhance bonding energy and prevent void formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If adhesive bonding is used to join semiconductor elements, then bonding strength is improved, but void formation and non-uniform bonding waves occur due to warpage and curvature
Solution Approach 1:
The patent changes the bonding parameters by transitioning from adhesive bonding to direct dielectric-to-dielectric bonding. This involves modifying the bonding mechanism, eliminating the adhesive layer, and using plasma activation to enable direct bonding between dielectric surfaces. The bonding energy, temperature, and surface preparation parameters are optimized to achieve uniform bonding waves and prevent void formation even with warped elements.
Solution Approach 2:
The patent extracts and eliminates the adhesive layer from the bonding process. By removing the adhesive intermediary, the invention enables direct bonding between dielectric surfaces of semiconductor elements. This extraction of the adhesive layer prevents the formation of voids and non-uniform bonding waves that occur with adhesive-based methods, while still achieving strong bonding through direct dielectric-to-dielectric contact.
2Adaptability or versatility
If elements with warpage and curvature are bonded, then manufacturing flexibility is improved, but bonding uniformity deteriorates leading to electrical signal disruptions
Solution Approach 1:
The patent applies preliminary plasma activation treatment to the dielectric surfaces before bonding. This preliminary action modifies the surface properties, increasing surface energy and creating reactive groups that facilitate direct bonding. The plasma treatment prepares the surfaces in advance to accommodate warpage and curvature, ensuring uniform bonding wave propagation and preventing electrical signal disruptions even when bonding elements with non-planar surfaces.
3Reliability
If direct dielectric-to-dielectric bonding is used without adhesives, then void formation is reduced, but bonding energy requirements increase
Solution Approach 1:
The patent changes the physical and chemical parameters of the dielectric surfaces through plasma activation. This treatment increases surface energy, creates reactive functional groups, and modifies surface morphology to enhance bonding capability. By optimizing these parameters, the patent reduces the overall bonding energy requirements for direct dielectric-to-dielectric bonding while maintaining void-free bonding interfaces.
Solution Approach 2:
The patent substitutes mechanical adhesive bonding with a chemical/physical direct bonding mechanism. Instead of relying on mechanical adhesion through adhesives, the invention uses plasma-activated direct bonding where chemical bonds form directly between dielectric surfaces. This substitution reduces bonding energy requirements by eliminating the need for adhesive curing and reduces void formation through more uniform bond propagation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables strong, void-free bonds with improved manufacturing yield and reliability by controlling bonding wave propagation and increasing bond strength, even with warped elements, thus reducing the likelihood of open circuits.
Implementation Method 1
surface roughening and activation processes, such as plasma treatment, to enhance bonding energy and prevent void formation
Data Source
AI summary
Bonded structures and methods of forming a bonded structure are disclosed. A bonded structure can include a first element and a second element. The first element includes a first non-conductive field region and a first conductive feature. The second element includes a second non-conductive field region and a second conductive feature. The second element is directly bonded to the first element along a bonding interface such that the first non-conductive field region is directly bonded to the second non-conductive field region without an intervening adhesive, and the first conductive feature is directly bonded to the second conductive feature without an intervening adhesive. A first portion of the first non-conductive field region at the bonding interface has a first surface roughness and a second portion of the first non-conductive field region at the bonding interface has a second surface roughness. The second surface roughness can be different from the first surface roughness. The first surface roughness can be greater than 6 Å rms.