Direct-Bonded Semiconductor Stack for Gap-Free Heat Dissipation
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Solution Overview
Problem
In semiconductor stack structures, gaps between elements due to process limitations and tolerances lead to reduced heat dissipation and design flexibility, as existing gap-filling materials often have lower thermal conductivity and restrict design options.
Innovation Solution
The approach involves side-by-side bonding of semiconductor elements followed by vertical bonding, using direct bonding techniques like fusion or hybrid bonding, which reduces bond thickness, eliminates the need for gap-filling materials, and enhances heat dissipation while increasing design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gap-filling materials are used to fill gaps between semiconductor elements, then gaps are filled and structural completeness is achieved, but thermal conductivity is reduced and design flexibility is restricted
Solution Approach 1:
The patent extracts and eliminates the gap-filling material from the semiconductor stack structure. By using direct bonding techniques to achieve substantially gap-free interfaces between semiconductor elements, the patent removes the thermal conductivity limitation imposed by traditional gap-filling materials, thereby improving heat dissipation while maintaining structural completeness through direct element-to-element bonding.
2Reliability
If gap-filling materials are used to fill gaps between semiconductor elements, then gaps are filled, but design flexibility is restricted
Solution Approach 1:
The patent removes the constraint of using gap-filling materials by implementing direct bonding between semiconductor elements. This extraction of the gap-filling requirement enables greater design flexibility, allowing semiconductor elements to be directly integrated without being limited by the thermal and design constraints of intermediate filling materials.
3Reliability
If conventional bonding methods are used, then bonding is achieved, but bond thickness is large and distance between elements is increased
Solution Approach 1:
The patent changes the bonding parameters by employing direct bonding techniques that achieve substantial gap elimination at interfaces. This parameter change in bonding methodology reduces bond thickness from conventional larger values to substantially gap-free interfaces, thereby minimizing the distance between semiconductor elements while ensuring reliable bonding through direct element-to-element contact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces the distance between semiconductor elements, increases density, miniaturizes the stack structure, and improves heat dissipation performance by eliminating the limitations of gap-filling materials, thereby enhancing both design flexibility and thermal conductivity.
Implementation Method 1
bonding a first semiconductor element and a second semiconductor element side-by side, and bonding the bonded first semiconductor element and second semiconductor element on a third semiconductor element. In some embodiments, the side-by-side bonding and the bonding of the bonded first semiconductor element and second semiconductor element on the third semiconductor element are direct bonding, such as a fusion bonding
Implementation Method 2
In some embodiments, the side-by-side bonding and the bonding of the bonded first semiconductor element and second semiconductor element on the third semiconductor element are direct bonding, such as a fusion bonding, a hybrid bonding
Data Source
AI summary
Disclosed are a semiconductor stack structure and a manufacturing method of a semiconductor stack structure. In one embodiment, the semiconductor stack structure includes a first semiconductor element, a second semiconductor element side-by-side bonded to the first semiconductor element through a direct bonding manner and a third semiconductor element, wherein the first semiconductor element and the second semiconductor element are bonded on the third semiconductor element.