Direct Bonding Structure for Ultra-Fine Pitch IC Assemblies

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Solution Overview

Problem

Conventional integrated circuit (IC) packages using solder-based attach technologies are limited by low pitch constraints, which hinder the achievement of fine pitches required for next-generation devices, and do not effectively manage thermal and electrical performance.

Innovation Solution

The use of direct bonding techniques between microelectronic components and an organic interposer, which allows for ultra-fine pitch connections and enhanced thermal and electrical performance by eliminating the need for solder and utilizing metal-to-metal or hybrid bonding with varying metal densities and dielectric materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If solder-based attach technologies are used, then manufacturing process is simple and reliable, but pitch is limited and cannot achieve ultra-fine pitches

Engineering Contradiction:

ImprovepitchVSAvoidbonding process complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent changes the bonding parameters from solder-based attachment to direct metal-to-metal bonding, enabling pitch reduction from conventional limits to ultra-fine pitches below 100 micrometers. This parameter change in the bonding mechanism allows achieving finer pitches while maintaining connection reliability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent extracts and eliminates the solder layer from the bonding interface, transitioning from solder-based attach to direct bonding between microelectronic component metals. This removal of the intermediate solder material enables ultra-fine pitch connections that are not achievable with conventional solder processes

Inventive Principle:

Principle #2Taking out (Extraction)

2Temperature

If direct bonding with varying metal densities is used, then thermal management is improved, but manufacturing complexity increases

Engineering Contradiction:

Improvethermal managementVSAvoiddirect bonding structure complexity

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The patent applies local quality by creating direct bonding regions with varying metal densities at different locations. High metal density regions are positioned in areas requiring superior thermal management to efficiently conduct heat away from heat-generating components, while other regions have adjusted metal densities optimized for their specific functional requirements

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent employs composite material structures in the direct bonding interface by combining different metal materials with varying densities and thermal conductivities. This composite approach allows optimization of thermal management properties while maintaining electrical connectivity and mechanical strength

Inventive Principle:

Principle #40Composite materials

3Reliability

If conventional solder-based attach is used, then process is well-established, but thermal and electrical performance is insufficient for next-generation devices

Engineering Contradiction:

Improvethermal and electrical performanceVSAvoidmanufacturing process simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent substitutes the mechanical solder attachment system with a direct metal-to-metal bonding system. This replacement eliminates the solder intermediary layer that limits thermal and electrical performance, achieving superior heat dissipation and electrical conductivity required for next-generation high-performance devices

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS12199018B2Direct bonding in microelectronic assemblies

Publication Date: 2025.01.14 INTEL CORP

AI summary

Disclosed herein are microelectronic assemblies including direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first subregion and a second subregion, and the first subregion has a greater metal density than the second subregion. In some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first metal contact and a second metal contact, the first metal contact has a larger area than the second metal contact, and the first metal contact is electrically coupled to a power/ground plane of the first microelectronic component.