Direct Bonding Semiconductor Stack Thickness Reduction
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Solution Overview
Problem
The use of adhesive materials in semiconductor stacking increases the thickness of semiconductor stacks and deteriorates signal transmission quality, necessitating a method for bonding semiconductor layers without additional adhesive material.
Innovation Solution
The implementation of direct bonding techniques such as fusion bonding and hybrid bonding between semiconductor workpieces and glass substrates, utilizing smooth surfaces and annealing to form covalent bonds, eliminates the need for adhesive materials and enhances signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If adhesive materials are used for bonding semiconductor wafers and substrates, then the bonding strength is improved, but the total thickness of the semiconductor stack increases and signal transmission quality deteriorates
Solution Approach 1:
The patent removes the adhesive material layer from the bonding interface between semiconductor wafers and substrates. By directly bonding the semiconductor wafer surface to the substrate surface without any adhesive layer, the thickness contribution from adhesive materials is completely eliminated, thereby resolving the contradiction between bonding strength and stack thickness.
Solution Approach 2:
The patent introduces a bonding interface as an intermediary between the semiconductor wafer and substrate. This bonding interface enables direct bonding through surface preparation techniques (such as plasma treatment or chemical etching) that create strong chemical bonds without requiring adhesive materials, thus achieving both strong bonding and minimal thickness.
2Strength
If adhesive materials are used for bonding semiconductor wafers and substrates, then the bonding strength is improved, but the signal transmission quality deteriorates
Solution Approach 1:
The patent extracts and removes the adhesive material from the bonding structure. By eliminating the adhesive layer that causes signal attenuation and interference, the signal transmission quality is significantly improved while maintaining bonding strength through direct surface bonding mechanisms.
Solution Approach 2:
This principle metaphorically refers to changing the material properties at the bonding interface. The patent transforms the bonding interface from an adhesive-based connection to a direct surface-to-surface bond, changing the physical and electrical characteristics of the interface to improve signal transmission while maintaining structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the thickness of semiconductor stacks and improves signal quality by eliminating the thickness added by adhesive materials and promoting strong chemical bonds between semiconductor and glass substrates.
Implementation Method 1
The surfaces are then brought into contact so that hydrogen bonds form between the hydroxyl groups on the oxide layer surface and the hydroxyl groups on the substrate surface
Implementation Method 2
The bonding between the oxide layer and the substrate is then strengthened through annealing that transforms the hydrogen bonds into covalent bonds
Implementation Method 3
The backside of the semiconductor workpiece may then be thinned by a mechanical or chemical process
Implementation Method 4
The backside of the semiconductor workpiece may then be thinned by a mechanical or chemical process
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. The method includes: providing a first semiconductor workpiece; depositing a first film on a first surface of the semiconductor workpiece; depositing a second film on a substrate that is transmissive to light within a predetermined wavelength range; and bonding the first film to the second film under a predetermined bonding temperature and a predetermined bonding pressure.