Direct Bonding Interface Singulation for Fine-Pitch Die Assembly

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Solution Overview

Problem

Conventional integrated circuit (IC) packages rely on wirebonding or soldering, which limits the achievable pitch and mechanical reliability, especially for next-generation devices that require finer pitches and more sophisticated die complexes.

Innovation Solution

The use of direct bonding interfaces, which involve metal-to-metal or hybrid bonding techniques between interposers and microelectronic components without intervening solder, utilizing conductive contacts and dielectrics to form reliable electrical and mechanical connections, enabling higher current conduction and finer pitches.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If wirebonding or soldering is used for connecting die to package substrate, then the connection method is simple and well-established, but the achievable pitch is limited and mechanical reliability is reduced

Engineering Contradiction:

Improveachievable pitchVSAvoidconnection method complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent changes the bonding parameters by transitioning from wirebonding/soldering to direct bonding techniques (such as copper-to-copper bonding, hybrid bonding with dielectric and metal layers, or bump bonding). This parameter change enables finer pitches (e.g., 10 micrometers or less) while maintaining connection reliability, as the direct bonding interface eliminates the need for intermediate wirebonds or solder joints that limit pitch reduction.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If wirebonding or soldering is used for connecting die to package substrate, then the process is well-established, but mechanical reliability is limited

Engineering Contradiction:

Improvemechanical reliabilityVSAvoidmanufacturing process simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent replaces the mechanical wirebonding or soldering system with a direct bonding system where metal-to-metal or hybrid bonding creates a more robust mechanical and electrical interface. This substitution improves mechanical reliability by eliminating weak points (wirebond attachments, solder joints) and creating a monolithic bonding structure that better withstands thermal and mechanical stress.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Power

If direct bonding interfaces are used, then higher current conduction and finer pitches are enabled, but the bonding process becomes more complex

Engineering Contradiction:

Improvecurrent conduction capabilityVSAvoidbonding process complexity

Core Design Contradiction:

PowerVSDevice complexity

Solution Approach 1:

The patent employs composite material structures in hybrid bonding interfaces, combining dielectric layers (such as silicon oxide, silicon nitride, or organic dielectrics) with metal layers (copper, aluminum, or their alloys). This composite approach enables finer pitches and higher current conduction by creating a multi-layer bonding structure that provides both electrical connectivity and mechanical stability, while the dielectric layers facilitate planarization and insulation.

Inventive Principle:

Principle #40Composite materials

Data Source

PatentUS20250015028A1Singulation of microelectronic components with direct bonding interfaces

Publication Date: 2025.01.09 INTEL CORP

AI summary

Disclosed herein are structures and techniques related to singulation of microelectronic components with direct bonding interfaces. For example, in some embodiments, a microelectronic component may include a surface, wherein conductive contacts are at the surface; a trench at a perimeter of the surface, the trench having a depth; and a burr in the trench having a height that is less than the depth of the trench.