Direct-Conversion X-Ray Sensing Panels for High Spatial Resolution
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Solution Overview
Problem
Existing X-ray sensing devices require additional conversion devices, such as scintillators, leading to reduced sensing resolution and increased cost, and are limited by external quantum efficiency and compatibility issues with semiconductor processes.
Innovation Solution
An X-ray sensing device comprising a substrate, first and second metal electrodes, and an X-ray photoelectric conversion layer made of materials like silicon or amorphous selenium, which directly converts X-rays into photocurrent without additional converters, enhancing sensitivity and compatibility with semiconductor processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a scintillator is used to convert X-rays into visible light for sensing, then the sensing device can detect X-rays, but the sensing resolution is reduced due to multiple emission angles
Solution Approach 1:
The patent removes the scintillator conversion layer from the sensing device structure. By directly using an X-ray photoelectric conversion layer that converts X-rays into electrical signals without intermediate visible light conversion, the patent eliminates the source of multiple emission angles and maintains high spatial resolution while preserving X-ray detection capability.
Solution Approach 2:
The patent replaces the optical conversion mechanism (scintillator converting X-rays to visible light) with a direct photoelectric conversion mechanism. The X-ray photoelectric conversion layer directly generates electrical signals from X-ray photons, substituting the mechanical/optical conversion process with a more efficient direct conversion process that preserves spatial information.
2Power
If conventional photodiodes are used for sensing, then the device can convert light to electrical signals, but the external quantum efficiency cannot exceed 100%
Solution Approach 1:
The patent changes the material composition and structural parameters of the photoelectric conversion layer to achieve superior quantum efficiency. By using specific materials and optimizing the layer structure, the device achieves an external quantum efficiency exceeding 100%, meaning more than one electron-hole pair is generated per incident photon, thereby converting light to electrical signals with higher efficiency than conventional photodiodes.
3Reliability
If a sensing layer is placed between upper and lower electrodes, then the photodiode can function, but the process variation is small and compatibility with semiconductor processes is difficult
Solution Approach 1:
The patent designs the X-ray photoelectric conversion layer to serve multiple functions: it acts as both the X-ray detection element and the photoelectric conversion element, eliminating the need for separate sensing layers and electrodes. This multi-functional design enables direct integration with semiconductor processes and various substrate types (glass, flexible panels, thin film transistors) without requiring additional process steps.
4Object-affected harmful factors
If additional conversion devices are added to sense X-rays, then the device can detect X-rays, but the process cost increases
Solution Approach 1:
The patent merges the X-ray detection function and the photoelectric conversion function into a single integrated layer. The X-ray photoelectric conversion layer simultaneously performs X-ray absorption and direct electrical signal generation, eliminating the need for separate scintillator and photodiode components. This consolidation reduces the number of materials, manufacturing steps, and assembly processes, thereby lowering overall process cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high photosensitivity, increased photocurrent, and improved signal-to-noise ratio while reducing feature size and process complexity.
Implementation Method 1
an X-ray photoelectric conversion layer... which directly converts X-rays into photocurrent
Data Source
AI summary
The present disclosure provides an X-ray sensing device. The X-ray sensing device includes a substrate, a first metal electrode, a second metal electrode, an X-ray photoelectric conversion layer, a third metal electrode, and an insulating layer. The first metal electrode and the second metal electrode are on the substrate and separated from each other. The X-ray photoelectric conversion layer extends continuously on the substrate and directly contacts the first metal electrode and the second metal electrode. The X-ray photoelectric conversion layer includes silicon, amorphous selenium, germanium, cadmium zinc telluride, bismuth iodide, lead oxide, Cs2TeI6 perovskite, CsPbBr3 perovskite, bismuth-based halide perovskite, 6,13-bis(triisopropylsilylethynyl)pentacene, poly(9,9-dioctylfluorene), polydimethylsilane, or combinations thereof. The third metal electrode and the insulating layer are on the substrate, and the third metal electrode is separated from the first metal electrode, the second metal electrode, and the X-ray photoelectric conversion layer by the insulating layer.