Direct Die-to-Die Wire Bonding for Pressure Sensors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing pressure sensors require multiple wire bonds and conductive traces to connect the silicon pressure sense die and programmable compensation IC die, increasing package size, manufacturing cost, and reliability issues due to the complexity of these connections.
Innovation Solution
Direct die-to-die wire bonding method where the pressure sense die and programmable compensation IC die are positioned beside each other with aligned bond pads, reducing the number of wire bonds and using multiple wire bond pad patterns on the pressure sense die for compatibility with different IC dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate bonding of silicon pressure sense die and compensation IC die to ceramic substrate with substrate traces is used, then electrical connection between die is achieved, but number of wire bonds increases and package size increases
Solution Approach 1:
The patent merges the bonding process by directly bonding the silicon pressure sense die to the compensation IC die together as a single unit, eliminating the need for separate substrate bonding and reducing the number of wire bonds required. This combining of bonding operations directly reduces device complexity while maintaining electrical connection reliability.
Solution Approach 2:
The patent introduces a carrier substrate as an intermediary component that holds both the silicon pressure sense die and compensation IC die in precise alignment during the bonding process. This mediator enables direct die-to-die bonding while providing the necessary support and positioning infrastructure.
2Reliability
If multiple wire bonds and conductive traces are used to connect die, then electrical connection is achieved, but manufacturing cost increases
Solution Approach 1:
The patent combines multiple bonding operations into a single simultaneous bonding process where the silicon pressure sense die and compensation IC die are bonded together in one step. This reduces manufacturing complexity and cost while maintaining the necessary electrical connections through fewer wire bonds.
Solution Approach 2:
The patent performs preliminary alignment and positioning of the die on the carrier substrate before the actual bonding process. This preliminary action ensures precise pad alignment, enabling direct bonding with fewer wire bonds and reducing manufacturing cost while maintaining connection reliability.
3Reliability
If longer wire bond paths are used to connect die, then electrical connection is achieved, but inductance increases
Solution Approach 1:
The patent merges the positioning and bonding operations by directly bonding the die together in close proximity, eliminating the need for long wire bond paths through the substrate. This direct bonding approach minimizes wire bond length and reduces inductance while maintaining reliable electrical connections.
Solution Approach 2:
The patent transitions from a planar substrate-based connection approach to a three-dimensional direct die-to-die bonding approach. By stacking the die vertically or positioning them in close three-dimensional proximity, the wire bond paths become significantly shorter, reducing inductance while maintaining connection reliability.
4Adaptability or versatility
If more bond pads are required for different IC dies, then compatibility is achieved, but device complexity increases
Solution Approach 1:
The patent implements a universal bond pad layout on the silicon pressure sense die that can accommodate different compensation IC die types. The standardized pad configuration enables the same pressure sense die to be bonded with various IC dies, providing compatibility without increasing device complexity through multiple specialized pad patterns.
Solution Approach 2:
The patent employs a flexible bonding approach where the carrier substrate can be repositioned or reconfigured to align different IC dies with the standardized bond pads on the pressure sense die. This dynamic positioning capability provides compatibility with different IC dies without requiring changes to the fundamental pad layout.
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A method for direct die-to-die wire bonding incorporates a pressure sense die and a programmable compensation IC die that can be mounted on a ceramic substrate. The two die can be positioned beside each other such that wire bond pads on the pressure sense die and bonding leads on the compensation IC die are in same order. The pressure sense die and the compensation IC can be connected directly with wire bonds in order to reduce the number of wire bonds and to improve reliability. The pressure sense die can be designed with multiple wire bond pad patterns in order to be utilized with different programmable compensation IC dies.