Direct Graphene Growth on Inorganic Substrates
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Solution Overview
Problem
The transfer process of graphene to a target substrate often results in damages or defects, such as tears or wrinkles, which negatively affect the physical characteristics of final electronic devices.
Innovation Solution
A method of directly growing crystalline graphene on an inorganic substrate without a transfer process, involving thermal treatments and the use of a vapor carbon supply source, along with a graphitization catalyst layer, to form high-crystallinity graphene on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a transfer process is used to move graphene to a target substrate, then graphene can be applied in electronic devices, but damages or defects such as tears or wrinkles occur in the graphene
Solution Approach 1:
The patent extracts and eliminates the transfer process from the graphene manufacturing workflow. By directly growing graphene on the final target substrate rather than transferring it from a separate growth substrate, the invention removes the source of mechanical damage (tears and wrinkles) while maintaining the ability to produce high-quality graphene for electronic device applications
Solution Approach 2:
The patent performs preliminary substrate preparation and catalyst deposition before graphene growth. By pre-configuring the target substrate with appropriate catalysts and structural features, the invention enables direct graphene growth without subsequent transfer steps, thereby preventing damage while ensuring high manufacturing precision
2Adaptability or versatility
If a transfer process is used to move graphene to a target substrate, then graphene can be applied in electronic devices, but the physical characteristics of the final electronic device are negatively affected
Solution Approach 1:
The invention extracts the harmful transfer step from the manufacturing process. By eliminating the transfer process that causes mechanical damage and precision loss, the patent enables direct growth of high-quality graphene on device substrates, thereby maintaining both versatility in device application and high manufacturing precision for physical characteristics
Solution Approach 2:
The target substrate serves itself as both the growth platform and the final device substrate. The substrate provides catalysts, structural support, and electrical connections throughout the entire process, eliminating the need for separate transfer operations that compromise device precision and characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the application process and reduces damage to graphene, resulting in high-crystallinity graphene with a reduced number of defects, suitable for use in electronic devices as a transparent electrode or in display devices.
Implementation Method 1
performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor
Implementation Method 2
supplying heat to an inorganic substrate in a reactor
Implementation Method 3
introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon
Implementation Method 4
binding the activated carbon on the inorganic substrate to grow the crystalline graphene
Implementation Method 5
introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon; and binding the activated carbon on the inorganic substrate
Implementation Method 6
the first thermal treatment may be performed in a reducing atmosphere
Implementation Method 7
the method further may include a cooling process at a rate in a range about 10° C. per minute to about 100° C. per minute after the first thermal treatment
Data Source
AI summary
A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.