Direct-Contact Heat Paths for Dense Semiconductor Substrates
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Solution Overview
Problem
The reduction in circuit size in semiconductor devices leads to increased heat retention and limited heat dissipation due to decreased separation between heat-generating circuits, affecting performance and reliability.
Innovation Solution
Implementing direct thermal connections between semiconductor devices and substrates through thermally-conductive structures, such as metallic lids and spacers, which are directly attached to metal layers of the substrate, and utilizing Through-Silicon Vias (TSVs) to route thermal energy externally for efficient heat removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If circuit size is reduced to increase component density, then productivity and device capability are improved, but heat dissipation capability deteriorates and heat retention increases
Solution Approach 1:
The patent transitions heat dissipation from a two-dimensional surface problem to a three-dimensional solution by creating vertical thermal pathways through the substrate using TSVs. This allows heat to be conducted downward through the substrate thickness to external connectors, effectively adding a third dimension (depth) to the heat dissipation architecture and enabling efficient thermal management in high-density configurations.
Solution Approach 2:
The patent introduces thermally-conductive structures as intermediary elements between the heat-generating circuits and the external environment. These structures, including TSVs filled with thermally-conductive material and metal layers, serve as thermal mediators that facilitate heat transfer from the embedded circuits through the substrate to external connectors, solving the heat dissipation problem without requiring increased separation between circuits.
2Productivity
If separation between heat-generating circuits is decreased to increase density, then component density is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent creates vertical thermal pathways through the substrate using TSVs, transitioning heat dissipation from horizontal surface-level processes to vertical three-dimensional conduction. This dimensional change enables heat to be efficiently removed through the substrate thickness to external connectors, maintaining effective heat dissipation even when horizontal separation between circuits is minimized for high density.
Solution Approach 2:
The patent segments the heat dissipation function into distinct components: TSVs for vertical heat conduction through the substrate, thermally-conductive structures for heat transfer from circuits to TSVs, and external connectors for heat removal from the substrate. This segmentation allows each component to be optimized for its specific thermal management function, enabling efficient heat dissipation in high-density configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances heat dissipation capabilities, allowing semiconductor devices to operate at higher speeds and with reduced errors by increasing the surface area for thermal transfer and providing direct thermal paths to external connectors.
Implementation Method 1
direct thermal connections between semiconductor devices and substrates through thermally-conductive structures
Implementation Method 2
utilizing Through-Silicon Vias (TSVs) to route thermal energy externally for efficient heat removal
Data Source
AI summary
Semiconductor devices including thermally conductive structures are disclosed herein. A heat transfer structure may be thermally coupled to a semiconductor device and directly attached to a signaling layer of a substrate. The heat transfer structure may be configured to remove thermal energy from the semiconductor device and transfer at least a portion of the removed thermal energy directly into the signaling layer for dissipation within the substrate, for transfer through the substrate and out of a corresponding apparatus, or a combination thereof.