Direct Injection Circuit With Common Gate Amplifier

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Solution Overview

Problem

Current circuits for detector applications, such as direct integration, capacitor transimpedance amplifiers, and resistor load amplifiers, face limitations including limited dynamic range, high power consumption, large size, nonlinearity, and noise, particularly in low background infrared spectra detection.

Innovation Solution

An enhanced direct injection circuit is introduced, which adds an electronic charge in parallel to the photon-induced charge using a common gate amplifier, enabling low impedance and high bandwidth, and incorporating a reset switch for efficient charge injection through capacitors and transistors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If direct integration circuits are used, then the circuit prevents linear responses, but the circuit has low bandwidth and limitations at low background

Engineering Contradiction:
Improvelinear responseVSAvoidbandwidth
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The circuit is segmented into distinct functional blocks: detector, common gate amplifier, injection transistor, and capacitor network. This segmentation allows each component to be optimized for its specific function, enabling the overall circuit to achieve both linear response and high bandwidth that cannot be achieved with a single integrated circuit approach.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The common gate amplifier acts as an intermediary between the detector and the readout circuitry. It provides impedance transformation and signal conditioning that enables both linear response preservation and high bandwidth operation, mediating between the detector's output characteristics and the requirements of the subsequent circuit stages.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Power

If capacitor transimpedance amplifiers (CTIAs) are used, then the circuit provides amplification, but it requires high power and significant real estate

Engineering Contradiction:
Improvepower consumptionVSAvoidreal estate
Core Design Contradiction:
PowerVSArea of stationary object

Solution Approach 1:

The patent extracts the amplification function from a traditional high-power CTIA configuration and implements it using a common gate amplifier with capacitor-based charge storage. This extraction allows the circuit to achieve the necessary signal amplification with significantly reduced power consumption and smaller area by separating the amplification function from the charge integration function.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The circuit changes the operating parameters by using a common gate amplifier configuration with specific transistor sizing and capacitor values optimized for low power operation. The parameter optimization includes selecting appropriate transconductance values and capacitance ratios that enable low power consumption while maintaining the required dynamic range and bandwidth for detector applications.

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If source follower per detector (SFD) is used, then the circuit provides simple implementation, but it provides a limited dynamic range for infrared detectors

Engineering Contradiction:
Improvedynamic rangeVSAvoidcircuit complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The circuit implements dynamic range extension through the action of the injection transistor, which can dynamically adjust the charge transfer ratio based on the signal level. The capacitor network enables dynamic charge redistribution that adapts to different signal amplitudes, providing a wide dynamic range while maintaining a relatively simple circuit structure that is more adaptable than fixed SFD configurations.

Inventive Principle:
Principle #15Dynamics

4Measurement precision

If resistor load amplifiers are used, then the circuit provides amplification, but it requires a noisy high impedance resistor and well-matched MOSFETs

Engineering Contradiction:
Improvenoise levelVSAvoidMOSFET matching
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent substitutes the mechanical/resistive load with an active common gate amplifier configuration. This replacement eliminates the need for high-precision resistor and MOSFET matching by using the transistor's transconductance and the capacitor network to define the circuit's transfer characteristics, thereby reducing sensitivity to component variations and lowering noise levels.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The enhanced circuit achieves a compact design with low power consumption, wide dynamic range at low infrared light levels, and linear response, overcoming the limitations of existing circuits.

Implementation Method 1

photon-induced charge of a direct injection circuit

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Data Source

PatentUS9029770B2Enhanced direct injection circuit
Publication Date: 2015.05.12 RAYTHEON CO
  • US9029770B2 patent drawing
  • US9029770B2 patent drawing
  • US9029770B2 patent drawing

AI summary

A charge injection circuit is used to control injection of an electronic charge to be added to a photon-induced charge generated by a detector of a direct integration circuit. The electronic charge can be injected directly to the detector or through a parallel path to the detector. Injection of the electronic charge is controlled through one or more switching transistors