Directional Deposition Patterning for Sub-10 Nm Critical Dimensions
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Solution Overview
Problem
Current lithography technologies struggle to achieve critical dimensions below 10 nm due to resolution limitations, leading to high complexity, long processing times, and high costs in semiconductor device manufacturing.
Innovation Solution
A method involving the formation of patterning layers, patterning features, and a non-conformal film layer with asymmetric thicknesses is used to create patterned features with critical dimensions smaller than the direct printing capability of lithographic processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography technologies (EUV, DUV) are used to pattern features, then manufacturing process is straightforward, but critical dimensions cannot achieve below 10 nm due to resolution limitations
Solution Approach 1:
The patterning process is divided into multiple sequential steps: forming mandrels at relaxed pitch, depositing spacers, selectively removing portions, and repeating the process. This segmentation allows each step to operate at relaxed dimensions while achieving sub-10 nm final features through cumulative refinement
Solution Approach 2:
The invention transitions from planar 2D patterning to 3D vertical patterning by utilizing spacer deposition on sidewalls of mandrels. This adds a vertical dimension to the patterning process, enabling critical dimension control through vertical film thickness rather than lateral lithographic resolution
2Manufacturing precision
If multiple patterning steps (SAQP, LELE) are implemented to achieve sub-10 nm features, then critical dimension is improved, but processing time and cost increase significantly
Solution Approach 1:
Mandrels are formed in advance at relaxed pitch dimensions using conventional lithography, establishing a foundation for subsequent spacer-based patterning. This preliminary structuring enables later dimensional refinement without requiring high-resolution lithography at each step
Solution Approach 2:
Spacer layers serve as intermediary structures that transfer and refine the pattern from mandrels to final features. The spacers mediate the dimensional transformation, allowing relaxation of lithographic resolution requirements while achieving sub-10 nm critical dimensions through controlled deposition thickness
3Manufacturing precision
If multiple patterning schemes (active-cut, X-SADP) are used to reduce critical dimension, then feature size is improved, but shallow trench isolation active island area is reduced
Solution Approach 1:
Selective removal of spacers in specific regions creates local variations in pattern density and feature distribution. This allows optimization of active island areas in certain regions while maintaining sub-10 nm critical dimensions in patterned features, achieving both goals through spatially differentiated processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of patterned features with critical dimensions below 10 nm, reducing processing complexity, time, and cost while improving patterning accuracy.
Implementation Method 1
depositing a non-conformal film layer over a surface of the one or more patterning layers and the patterning features
Data Source
AI summary
A method of forming a pattern in a device structure formed on a substrate includes forming one or more patterning layers over a surface of a device structure formed on the substrate, forming patterning features in the one or more patterning layers, depositing a non-conformal film layer over a surface of the one or more patterning layers and the patterning features, and etching a portion of a device feature of the plurality of device features that is exposed within each film layer opening formed within the patterning features. Each of the patterning features are disposed over at least a portion of a device feature of a plurality of device features, and each of the patterning features comprise a feature opening that comprises a first critical dimension (CD) that is greater than the first lateral dimension.