Directional Film Deposition for Edge Placement Error Patterning
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving sub-resolution dimensions due to offset errors in photolithographic pattern alignment, leading to issues like 'mouse bite' damage and increased complexity, cost, and processing time.
Innovation Solution
A method involving the formation of patterning layers, directional deposition of a film layer with asymmetric thickness, and subsequent etching to minimize offset errors and achieve critical dimensions below the direct printing capability of lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithographic patterning is used to achieve sub-resolution dimensions, then manufacturing precision deteriorates due to offset errors and mouse bite damage, but process complexity and cost increase when alternative methods are employed
Solution Approach 1:
A deposited film layer is introduced as an intermediary between the photolithographic pattern and the underlying structure. This film layer, with controlled thickness and material properties, acts as a mediator that compensates for alignment offsets and prevents mouse bite damage during etching, thereby maintaining manufacturing precision without increasing process complexity
Solution Approach 2:
The invention changes physical parameters by depositing a film layer with specific thickness ranges (e.g., 5-50 nm) and material composition that can be precisely controlled. By adjusting these parameters, the system compensates for alignment errors and enables sub-resolution patterning while keeping the overall process simple
2Manufacturing precision
If photolithographic pattern alignment is performed with standard methods, then processing time and cost increase due to the need for multiple patterning steps, but manufacturing precision deteriorates due to inherent offset errors
Solution Approach 1:
The deposited film layer is formed in advance before the etching step. This preliminary action establishes a protective and compensating layer that pre-empts alignment issues, allowing single-step patterning instead of multiple sequential steps, thereby reducing both processing time and the accumulation of alignment errors
Solution Approach 2:
The film layer serves as a mediator that decouples the alignment requirements between the photolithographic pattern and the final etched feature. This intermediary layer absorbs alignment tolerances and enables higher precision feature placement without requiring multiple alignment steps
3Manufacturing precision
If patterned openings are formed with standard lithography resolution, then processing cost and time increase, but manufacturing precision deteriorates due to offset errors causing mouse bite damage
Solution Approach 1:
The deposited film layer acts as a mediator that protects against mouse bite damage and compensates for offset errors. This intermediary structure enables the use of standard lithography processes while achieving superior feature dimension accuracy, maintaining ease of manufacture without sacrificing precision
Solution Approach 2:
The invention converts the harmful effect of offset errors and the resulting mouse bite damage into a benefit by using the deposited film layer to intentionally over-protect certain areas. The film layer's presence transforms what would be damaging exposure into a controlled protective mechanism, improving feature dimension accuracy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the impact of offset errors, minimizes 'mouse bite' damage, and enables the fabrication of features at sub-resolution dimensions with reduced processing complexity, cost, and time.
Implementation Method 1
forming patterning features in the one or more patterning layers, wherein each of the patterning features comprises a feature opening that comprises a first critical dimension (CD)... depositing a film layer over a surface of the one or more patterning layers and the patterning features, wherein the film layer formed within each of the feature openings comprises a first thickness and a second thickness that is formed over the one or more surfaces of the feature opening, wherein the first thickness is larger than a second thickness
Data Source
AI summary
A method of forming a pattern in a device structure formed on a substrate includes forming one or more patterning layers over a surface of a device structure formed on the substrate, forming patterning features in the one or more patterning layers, depositing a film layer over a surface of the one or more patterning layers and the patterning features, and etching at least a portion of a first device feature of a plurality of device features that is exposed within each of film layer openings formed within the patterning features.