Directional Sidewall Deposition for Pinch and Bridge Defects
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Solution Overview
Problem
Conventional etching processes fail to adequately reduce pattern defects, particularly local defects such as pinch and bridge defects, in microscale and nanoscale structures, leading to issues like line breaks and material excess in semiconductor fabrication.
Innovation Solution
Utilizing a directional beam with an azimuthal component parallel to the longitudinal direction of line patterns to concurrently deposit and etch material, mitigating defects by directionally adding material to sidewalls and removing excess material from surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching processes are used to remove excess material, then material removal is achieved, but pattern defects such as pinch and bridge defects are not adequately reduced
Solution Approach 1:
The patent applies local quality by directing the beam at an oblique angle to create spatially selective deposition and etching. The sidewalls receive different treatment compared to the top surfaces, with deposition preferentially occurring on sidewalls and etching occurring on top surfaces. This local differentiation enables targeted defect removal while preserving line pattern integrity.
Solution Approach 2:
The patent employs asymmetry through the oblique beam incidence angle, which creates asymmetric interaction with the line pattern structures. The beam strikes the sidewalls and top surfaces at different angles, producing asymmetric deposition and etching rates that are optimized for defect removal. This asymmetric approach allows selective modification of problematic regions while maintaining overall pattern fidelity.
2Manufacturing precision
If material is deposited to fix pinch defects, then local material deficiency is corrected, but global material excess may occur
Solution Approach 1:
The oblique beam geometry creates local quality differences in material deposition. Sidewalls receive enhanced deposition to correct pinch defects, while top surfaces experience net removal due to preferential etching. This localized material addition prevents global material excess by confining deposition to specific regions that need it.
Solution Approach 2:
The patent performs continuous simultaneous deposition and etching in a single process step. The useful actions of adding material to pinch defects and removing excess material from bridge defects occur concurrently, maintaining process efficiency while achieving balanced material distribution through the directional beam's continuous interaction with different surface orientations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively mitigates both local and global defects, such as pinch and bridge defects, while maintaining the integrity of the line pattern, by balancing deposition and etching processes.
Implementation Method 1
The directional beam concurrently deposits material on sidewall surfaces of the line pattern
Implementation Method 2
The directional beam concurrently deposits material on sidewall surfaces of the line pattern and etches surfaces of the line pattern
Data Source
AI summary
A method of processing a substrate includes providing a substrate with a line pattern including lines extending in a longitudinal direction and exposing the line pattern to a directional beam. The directional beam has an azimuthal component substantially parallel to the longitudinal direction. Exposing the line pattern to the directional beam may concurrently deposit material on sidewall surfaces of the line pattern and etch surfaces of the line pattern with a normal component parallel to the longitudinal direction. The line pattern may have localized defects. The deposited material may mitigate pinch defects in the line pattern. The etched surfaces may mitigate bridge defects in the line pattern. A controller may be configured to cause the substrate to be processed according to the method. The controller may be included in a system further including a beam source and a substrate positioner.