Disc Cell Diode Clamping Assembly for Semiconductor Arrangement Fault Management
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Solution Overview
Problem
Existing semiconductor arrangements in modular multi-level converters are prone to destruction due to high thermal limitations of diode chips during short-circuit faults, leading to potential damage from uncontrolled short-circuit currents, and require additional protective components that increase costs.
Innovation Solution
The use of disc cell diodes mechanically braced in a diode clamping assembly, which provides higher thermal capacity and current-carrying ability, allowing for the elimination of parallel protection components and additional bridging switches, and the integration of a thyristor for controlled short-circuit path activation, reducing the risk of explosion and enabling cost savings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diode chips with bonding wires are used, then the device complexity is reduced, but the thermal capacity and current-carrying capacity are insufficient during short-circuit faults
Solution Approach 1:
The patent changes the physical parameters of the diode component by transitioning from small diode chips with bonding wires to large-area disc cell diodes. This parameter change dramatically increases the thermal capacity and current-carrying capacity, enabling the diodes to withstand short-circuit currents without additional protective components.
Solution Approach 2:
The disc cell diodes are designed to be robust and potentially replaceable after fault events. Their high thermal capacity allows them to survive faults that would destroy conventional diode chips, reducing the need for expensive protective components and complex bypass systems.
2Reliability
If additional protective components are added in parallel with diodes, then the reliability during faults is improved, but the device complexity and cost increase
Solution Approach 1:
The patent extracts and removes the additional protective components that are typically added in parallel with diode chips. The disc cell diodes themselves provide sufficient protection, eliminating the need for separate protective devices and simplifying the overall circuit architecture.
Solution Approach 2:
The disc cell diodes serve multiple functions: they perform their normal rectification function during operation and simultaneously provide fault protection during short-circuit events. This multi-functionality eliminates the need for dedicated protective components.
3Productivity
If mechanical bypass switches are added to bypass failed switching modules, then the operational continuity is improved, but the device complexity and cost increase
Solution Approach 1:
The disc cell diodes provide inherent fault tolerance without requiring external bypass switches. When a switching module fails, the high-current-capacity diodes can handle the fault conditions, allowing the system to continue operation or be safely shut down without additional mechanical bypass components.
4Volume of moving object
If low thermal capacity diode chips are used, then the device size is reduced, but the risk of destruction during faults increases
Solution Approach 1:
The patent changes the physical dimensions and thermal parameters of the diode component. Disc cell diodes have a significantly larger surface area and better thermal management characteristics compared to small diode chips, enabling them to dissipate heat more effectively during fault conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability and cost-effectiveness of semiconductor arrangements by reducing the risk of destruction during faults, eliminating the need for additional protection components and explosion-proof housing, while maintaining a compact and robust construction.
Implementation Method 1
Disk cell diodes have a higher thermal capacity due to a relatively large area. This advantageously reduces the risk of the semiconductor arrangement being destroyed in the event of a fault.
Implementation Method 2
In addition, the disc cell diodes have an increased current-carrying capacity, so that they can carry the short-circuit current in the event of a fault.
Implementation Method 3
By using the thyristor, a short-circuit path can be provided in parallel with the energy store by targeted activation of the thyristor in the event of a fault.
Data Source
Figure 1
Figure 2~3
Figure 4
AI summary
The invention relates to a semiconductor arrangement (40) with at least two switchable semiconductor switches (41, 42), an energy storage device (51), two external terminals (43, 44), wherein the energy storage device is connected to the semiconductor switches in such a way that a voltage can be generated at the terminals which corresponds to an energy storage voltage present at the energy storage device or to zero voltage, a protective semiconductor (54) in a parallel connection to the energy storage device, a series diode circuit (47, 48) in a further parallel connection to the energy storage device, wherein the series diode circuit comprises at least two diodes arranged in series, wherein a first diode of the series diode circuit is connected antiparallel to the first semiconductor switch and a second diode of the series diode circuit is connected antiparallel to the second semiconductor switch.The invention is characterized in that the diodes of the series diode circuit are disk cell diodes that are clamped together in a mechanical diode clamping assembly (46). Due to the design with disk cell diodes, a defined low-resistance failure of the diodes results in the event of a fault, which allows the semiconductor arrangement (40) to be bypassed by means of a thyristor. The switchable semiconductor switches can thus be implemented with Plastic Case Module IGBTs (PMIs), resulting in a cost advantage compared to Press-Pack IGBTs (PPIs). The invention further relates to a switching module (10, 30) with the semiconductor arrangement and a modular multi-stage converter (1) with the switching module.