Discontinuous Field Plate Layout for Nitride Breakdown Reliability
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Solution Overview
Problem
Nitride-based semiconductor devices face challenges in maintaining uniform electric field distribution and reliability due to stress accumulation from field plates, which can lead to cracks and degradation of electrical properties.
Innovation Solution
The introduction of a buried discontinuous field plate design with enclosed discontinuities reduces the area of the field plate, alleviating stress and maintaining electric field modulation, thereby enhancing the reliability and electrical characteristics of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a continuous field plate is used to make the electric field distribution more uniform, then the breakdown phenomenon is avoided, but the stress accumulation increases and cracks may occur
Solution Approach 1:
The field plate is divided into multiple discontinuous segments rather than being continuous. This segmentation reduces the accumulated stress in the field plate structure while maintaining the electric field modulation effect, thereby preventing cracks and improving overall reliability
2Reliability
If a field plate is added to uniformize the electric field distribution, then the breakdown phenomenon is prevented, but the device complexity increases
Solution Approach 1:
The field plate structure is merged with the existing gate electrode and dielectric layer configuration. The discontinuous field plate segments are integrated into the existing device architecture, reducing the need for additional separate components and simplifying the overall device complexity
3Reliability
If the field plate area is increased to improve electric field distribution, then the breakdown resistance is improved, but the stress accumulation increases
Solution Approach 1:
The field plate is segmented into discontinuous portions, which reduces the total continuous area while maintaining effective electric field coverage. This segmentation distributes and reduces stress accumulation that would occur in a large continuous field plate structure
Solution Approach 2:
The field plate is designed with discontinuous segments positioned at specific locations where electric field modulation is most needed. This local placement optimizes the electric field distribution while minimizing the overall stress accumulation in the structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The buried discontinuous field plate design effectively reduces stress accumulation, improves the reliability of the semiconductor device, and maintains good electric field modulation, leading to improved electrical properties and reduced crack formation.
Implementation Method 1
the second discontinuous field plate reshapes the electric field distribution to make it more uniform
Implementation Method 2
III-nitride-based HEMTs utilize a heterojunction interface between two materials with different bandgaps to form a quantum well-like structure, which accommodates a two-dimensional electron gas (2DEG) region
Data Source
AI summary
A semiconductor device includes a first and a second nitride-based semiconductor layers, a gate electrode, a first and a second field plates, and a first dielectric layer. The first field plate is disposed above the second nitride-based semiconductor layer. The second field plate is discontinuous and disposed above the second nitride-based semiconductor layer and in a position higher than the first field plate. The second field plate includes one or more enclosed discontinuities in a discontinuity region thereof. The first dielectric layer is disposed above the second field plate. The first dielectric layer covers and penetrates the second discontinuous field plate in the discontinuity region such that the second field plate encloses at least one portion of the first dielectric layer within its one or more enclosed discontinuities.