Discontinuous Seed Layer Structure to Prevent RDL Delamination

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Solution Overview

Problem

The issue of delamination between layers during the manufacturing of semiconductor devices due to stress in the redistribution layer (RDL) process is a challenge in achieving high integration and miniaturization.

Innovation Solution

A circuit structure is developed with a seed layer composed of discontinuous metal blocks on a dielectric layer, where the circuit layer is formed by electroplating on these blocks, creating a concave-convex surface to enhance bonding and prevent delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a whole seed layer is laid on the dielectric layer, then the manufacturing process is simple, but delamination occurs due to stress between layers

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidlayer bonding stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The seed layer is divided into multiple discontinuous metal blocks instead of forming a continuous layer. This segmentation creates a structure where individual metal blocks are distributed across the dielectric layer, reducing overall stress accumulation while maintaining local bonding areas that prevent delamination.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The discontinuous metal blocks create local variations in the seed layer structure, with each block providing localized bonding areas. This local quality approach allows stress to be distributed and managed at different locations, preventing uniform delamination while maintaining strong bonding where needed.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If the number of RDL layers is increased to meet high integration requirements, then device functionality is improved, but stress between layers increases causing delamination

Engineering Contradiction:
Improvedevice integration capabilityVSAvoidlayer bonding stability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

By segmenting the seed layer into discontinuous metal blocks in each RDL layer, the structure accommodates multiple layers without proportional increase in stress. Each metal block acts as an independent stress management unit, allowing the stacking of multiple RDL layers while maintaining bonding stability.

Inventive Principle:
Principle #1Segmentation

3Ease of manufacture

If a continuous seed layer is used, then electroplating is easier to perform, but the bonding area is insufficient to prevent delamination

Engineering Contradiction:
Improveelectroplating process easeVSAvoidinterlayer bonding strength
Core Design Contradiction:
Ease of manufactureVSStrength

Solution Approach 1:

The seed layer is segmented into multiple discontinuous metal blocks that are distributed across the dielectric layer. Each metal block serves as an electroplating substrate, and the collective arrangement of these blocks provides both sufficient total bonding area and effective stress distribution to prevent delamination.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The discontinuous metal blocks are arranged in a spatial distribution pattern across the dielectric layer surface. This dimensional arrangement increases the effective bonding area without requiring a continuous layer, allowing electroplating to occur on multiple discrete surfaces that collectively provide strong interlayer bonding.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This structure strengthens the bonding effect between layers, improving process yield and preventing delamination, thus supporting high integration and miniaturization of semiconductor devices.

Implementation Method 1

electroplating a circuit layer on the seed layer by using the seed layer as a current conduction path

Methodology Applied
Scientific EffectElectroplating: Electroplating

Data Source

PatentUS20260089837A1Circuit structure and manufacturing method thereof
Publication Date: 2026.03.26 SILICONWARE PRECISION IND CO LTD
  • US20260089837A1 patent drawing
  • US20260089837A1 patent drawing
  • US20260089837A1 patent drawing

AI summary

A circuit structure and a manufacturing method thereof are provided, in which a seed layer composed of a plurality of discontinuous metal blocks is formed on a dielectric layer, and a circuit layer is formed on the seed layer by electroplating. By roughening the overall surface of the plurality of discontinuous metal blocks and creating a relatively concave-convex structure, the bonding effect between the seed layer and the circuit layer formed thereon is strengthened, thereby preventing the problem of delamination and improving the process yield.