Discrete Transistor Leadframe for Power Converter Heat Dissipation
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Solution Overview
Problem
Existing semiconductor packaging for power electronics, particularly in multiphase power converters, faces challenges in heat dissipation and cost-effectiveness due to integrated transistors, where a defective transistor often requires discarding the entire semiconductor die, rather than just the defective component.
Innovation Solution
The use of discrete transistors, which are separate from integrated semiconductor dies, connected to input and reference leadframe segments, allowing for improved heat dissipation and cost-effective replacement of defective components, as only the discrete transistor needs to be discarded if faulty.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If integrated transistors are used in semiconductor packaging, then device integration and compactness are improved, but heat dissipation capability deteriorates and cost-effectiveness worsens due to the need to discard entire semiconductor dies when transistors fail
Solution Approach 1:
The patent divides the transistor structure into discrete, separable components rather than integrating them into a single semiconductor die. Each transistor is packaged independently in its own housing with separate leadframes, allowing individual transistors to be replaced without discarding other components. This segmentation resolves the contradiction by maintaining integration benefits at the system level while enabling independent heat management and component replacement at the transistor level.
2Device complexity
If integrated transistors are used in semiconductor packaging, then device compactness is improved, but cost-effectiveness deteriorates due to the need to discard entire semiconductor dies when transistors fail
Solution Approach 1:
The patent segments the transistor assembly into replaceable modular units with discrete housings and leadframes. This allows defective transistors to be replaced individually rather than requiring disposal of entire semiconductor dies, significantly improving cost-effectiveness while maintaining a compact integrated appearance at the system level.
Solution Approach 2:
The patent enables recovery and reuse of functional transistor components by allowing selective replacement of only defective transistors. The housing, leadframe, and other intact components are retained and reused, reducing waste and manufacturing costs compared to discarding entire integrated semiconductor dies.
3Temperature
If discrete transistors are used separately, then heat dissipation and component replacement flexibility are improved, but device complexity and packaging size increase
Solution Approach 1:
The patent combines multiple discrete transistor packages into a single integrated housing structure that provides unified support and electrical connections. The leadframes of individual transistors are interconnected within the housing to form a cohesive assembly, reducing overall packaging complexity while maintaining the heat dissipation and replacement flexibility benefits of discrete components.
Data Source
AI summary
In some examples, a device includes an input leadframe segment and a reference leadframe segment that is electrically isolated from the input leadframe segment. The device further includes at least four transistors comprising at least two high-side transistors that are electrically connected to the input leadframe segment and at least two low-side transistors that are electrically connected to the reference leadframe segment. The device further includes at least two switching elements, wherein each switching element of the at least two switching elements is electrically connected to a respective high-side transistor of the at least two high-side transistors, each switching element of the at least two switching elements is electrically connected to a respective low-side transistor of the at least two low-side transistors, and the at least four transistors include at least one discrete transistor.


