Etch-Resistant Disilane Copolymers for Photolithography

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Solution Overview

Problem

In photolithographic manufacturing processes, reducing feature sizes leads to challenges in controlling critical dimensions due to light reflection from layers, necessitating an antireflective material with suitable etch selectivity that is often limited by its similarity to photoresist properties.

Innovation Solution

Development of etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, specifically disilane and hydrocarbon bridge siloxane copolymers with a silylhydride moiety and chromophore, which serve as antireflective coatings and exhibit selective etchability with respect to organic photoresists.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If feature sizes are reduced in photolithographic processes, then device performance and economic savings are improved, but control over critical dimensions deteriorates due to light reflection from layers

Engineering Contradiction:
Improvedevice performanceVSAvoidcontrol over critical dimensions
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

An antireflective coating layer is introduced as an intermediary material between the substrate and the photoresist. This coating has specific optical properties (refractive index and absorption coefficient) that reduce light reflection and standing wave effects, thereby improving the precision of photolithographic patterning at reduced feature sizes

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies the chemical composition and molecular structure of the antireflective coating materials, specifically using disilane and saturated hydrocarbon bridged silicon-containing polymers with controlled silylhydride content and chromophore groups. These parameter changes optimize the balance between etch resistance and antireflective performance

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If an antireflective material is employed under the photoresist, then light reflection is reduced and exposure precision is improved, but etch selectivity deteriorates because many such materials exhibit properties similar to photoresist

Engineering Contradiction:
Improveexposure precisionVSAvoidetch selectivity
Core Design Contradiction:
Measurement precisionVSAdaptability or versatility

Solution Approach 1:

The patent creates a material with spatially differentiated properties by incorporating specific functional groups at controlled concentrations. The disilane units provide etch resistance, while chromophore groups provide antireflective properties. This local quality differentiation within the polymer structure enables simultaneous optimization of both etch selectivity and antireflective performance

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The antireflective coating is designed as a composite polymer system combining multiple monomeric units with distinct functions: disilane units for etch resistance, chromophore-containing units for optical properties, and saturated hydrocarbon bridged units for structural stability. This composite approach enables independent optimization of etch selectivity and antireflective characteristics

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The copolymers provide enhanced precision in photolithographic processes by reducing light reflection and allowing controlled etching, maintaining product yields while enabling smaller feature sizes with improved etch resistance and stability.

Implementation Method 1

a feature formed using a photolithographic process may not be formed with a satisfactory amount of control over critical dimensions as the size of the feature is reduced. In particular, light used to expose a photoresist formed on a layer may reflect from the layer and/or layer interfaces

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Implementation Method 2

Such a material may need to exhibit not only antireflective properties, but a suitable etch selectivity with respect to the photoresist as well

Methodology Applied
Scientific EffectSelective etching:

Data Source

PatentUS8026035B2Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same
Publication Date: 2011.09.27 CHEIL INDUSTRIES INC
  • US8026035B2 patent drawing
  • US8026035B2 patent drawing
  • US8026035B2 patent drawing

AI summary

A composition includes a copolymer including a mixture of monomeric units having structures (A), (B), and (C), and one or more of structures (D) or (E):HSiO(3-a)/2(OH)a  (A)Si(3-b)/2(OH)b—CH2)n—SiO(3-c)/2(OH)c  (B)R1SiO(3-d)/2(OH)d  (C)MeSi(3-e)/2(OH)e  (D)R2SiO(3-f)/2(OH)f  (E)wherein a, b, c, d, e, and f are independently from 0 to 2, n is from 0 to about 10, R1 is a chromophore, and R2 is a hydrophilic group.