Disilicon Hexachloride Purification via Adsorbent Extraction
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Solution Overview
Problem
Current methods for producing disilicon hexachloride for semiconductor applications are hindered by the presence of silanol impurities, which can slow down deposition rates and prevent homogeneous silicon nitride layer formation, necessitating an efficient purification method.
Innovation Solution
A method involving contact with an adsorbent material, preferably activated carbon, in an inert gas atmosphere, followed by distillation, to effectively remove silanol impurities from disilicon hexachloride, achieving a purity of 1 ppm or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If disilicon hexachloride is produced using conventional methods, then the production process is simple, but silanol impurities remain in the product
Solution Approach 1:
The patent applies extraction by contacting disilicon hexachloride with an organic solvent that selectively dissolves silanol impurities. The organic phase containing silanol is separated from the disilicon hexachloride, achieving purification while maintaining process simplicity.
Solution Approach 2:
The patent uses an organic solvent as an intermediary substance to facilitate the removal of silanol impurities. The solvent acts as a mediator between the disilicon hexachloride and the silanol, enabling selective extraction without complex processing steps.
2Productivity
If silanol impurities are present in disilicon hexachloride, then the material can be used directly, but deposition rate decreases and layer homogeneity is compromised
Solution Approach 1:
The patent removes silanol impurities through selective extraction using organic solvents, achieving silanol content of 1 ppm or less. This purification ensures both high deposition rates and homogeneous silicon nitride layer formation without requiring complex additional processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach efficiently reduces silanol impurities in disilicon hexachloride to concentrations below 1 ppm, making it suitable for high-performance semiconductor applications by ensuring stable and uniform silicon nitride layer formation.
Implementation Method 1
a contacting process for contacting a disilicon hexachloride material containing disilicon hexachloride and a silanol as an impurity with an adsorbent material to remove the silanol
Implementation Method 2
The method may comprise further a distilling process after the contacting process
Data Source
AI summary
The objective of the present invention is to provide a method for obtaining a high purity disilicon hexachloride by removing a silanol with good efficiency from a disilicon hexachloride material containing the silanol as an impurity. The purification method for disilicon hexachloride of the present invention comprises a process for contacting a disilicon hexachloride material containing disilicon hexachloride and a silanol as an impurity with an adsorbent material such as activated carbon to remove the silanol. The method may further comprise a distillation process. The above processes are preferably performed in an atmosphere of an inert gas.