Display Array Substrate Gate Insulator Etching Optimization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing manufacturing processes for display array substrates face challenges in increasing the etching rate of aluminum oxide (Al2O3) in the peripheral area to efficiently expose gate lines for electrical connections, hindering the efficiency of TFT production.
Innovation Solution
The process involves anodizing aluminum to form a gate insulator and using a photo-resist layer to create a thorough hole in the aluminum oxide layer without etching, allowing for improved manufacturing efficiency by eliminating the need for extensive etching in the peripheral area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching is used to form thorough holes in aluminum oxide layer, then gate lines can be exposed for electrical connection, but manufacturing efficiency is reduced due to low etching rate
Solution Approach 1:
The patent changes the material parameter by replacing aluminum oxide (Al2O3) with zinc oxide (ZnO) as the gate insulator material. ZnO can be etched at a much higher rate than Al2O3, thereby improving manufacturing efficiency while still achieving the required exposure of gate lines for electrical connection
Solution Approach 2:
The patent employs selective chemical etching processes that leverage the chemical properties of zinc oxide to achieve rapid removal of the gate insulator material in specific regions. The etching process is accelerated by using appropriate chemical solutions that react strongly with ZnO, enabling fast formation of thorough holes without compromising the underlying gate line structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the manufacturing efficiency of display array substrates by simplifying the process and improving the exposure of gate lines, thereby streamlining the production of TFTs.
Implementation Method 1
aluminum oxide (Al2O3) is usually utilized as one kind of material to form a gate insulator through anodization of aluminum on a display array substrate
Implementation Method 2
using a photo-resist layer to create a thorough hole in the aluminum oxide layer without etching
Data Source
AI summary
A display array substrate includes a substrate, a plurality of gate lines and a plurality of data lines disposed on the substrate, and a plurality of gate connecting pads. Each gate connecting pad is disposed at an end of one of the gate lines. The end of each gate line is partly covered by a first insulation layer. The first insulation layer is an anodic oxide layer.