Display Driving Backplane Layout With Shared TFT and Capacitor Layers
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Solution Overview
Problem
The existing driving backplanes with low temperature polycrystalline oxide technology require multiple film layers, leading to complex processes and high production costs due to the need for two kinds of thin film transistor devices.
Innovation Solution
The driving backplane design integrates polysilicon and oxide transistors with a storage capacitor, simplifying film layers by placing the first electrode plate of the storage capacitor and the active part of the oxide transistor in the same layer, and using fan-out wirings in different conductive layers with equal impedance to improve efficiency and reduce costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low temperature polycrystalline oxide technology is used to achieve high resolution, high reaction speed, high brightness, high opening rate, low power consumption, and refresh rate of 1Hz to 120 Hz, then display performance is improved, but the number of film layers increases and the process becomes complex
Solution Approach 1:
The patent combines the storage capacitor electrode plate and the oxide transistor active part into the same layer, reducing the total number of film layers. This merging approach maintains the required display performance while simplifying the overall structure and reducing process complexity.
Solution Approach 2:
The same layer serves multiple functions by containing both the storage capacitor electrode plate and the oxide transistor active part. This multi-functional design reduces the number of dedicated layers needed, thereby simplifying the device structure while maintaining performance.
2Reliability
If two kinds of thin film transistor devices are prepared in a driving backplane having the low temperature polycrystalline oxide, then high mobility and low leakage current are achieved, but the preparation efficiency decreases and production cost increases
Solution Approach 1:
By merging the storage capacitor electrode plate and oxide transistor active part into the same layer, the patent reduces the total number of fabrication steps and film deposition processes. This increases preparation efficiency while maintaining the performance benefits of having both polysilicon and oxide transistors.
3Reliability
If two kinds of thin film transistor devices are prepared in a driving backplane having the low temperature polycrystalline oxide, then high mobility and low leakage current are achieved, but the production cost increases
Solution Approach 1:
The patent reduces production cost by merging the storage capacitor electrode plate and oxide transistor active part into the same layer. This reduces the number of film deposition and patterning steps, thereby lowering manufacturing complexity and production cost while maintaining high transistor performance.
4Reliability
If fan-out wirings are arranged in different conductive layers with equal impedance, then display uniformity is maintained and parasitic capacitance is minimized, but the wiring structure becomes more complex
Solution Approach 1:
The patent uses different conductive layers (vertical dimension) to route the first and second fan-out wirings, allowing them to be positioned independently to achieve equal impedance and minimize parasitic capacitance. This layered approach maintains display uniformity while managing wiring complexity through three-dimensional spatial arrangement.
Data Source
AI summary
A driving backplane and a display panel are provided by the present application. The driving backplane includes a substrate and a first semiconductor layer, a first conductive layer, a second semiconductor layer, and a second conductive layer arranged on the substrate. The first semiconductor layer forms an active part of a polysilicon transistor. The first conductive layer forms a gate of the polysilicon transistor. The second semiconductor layer forms an active part of an oxide transistor and a first electrode plate of a storage capacitor. The second conductive layer forms a gate of the oxide transistor.