Display Base Plate Double-Gate TFT for Electrical Stability
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Solution Overview
Problem
Existing thin film transistors (TFTs) suffer from poor electrical performance stability, affecting the display effect and reliability of display devices due to issues with threshold voltage stability.
Innovation Solution
A thin film transistor design featuring a double-gate structure with a channel area comprising a first and second channel area connected by a resistance area, and a source and drain contact area with specific doping levels, along with a transparent electrode layer configuration to enhance stability and reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-gate TFT structure is used, then the device complexity is low, but the electrical performance stability is poor
Solution Approach 1:
The channel area is divided into a first channel area and a second channel area, which are controlled by separate first gate and second gate respectively. This segmentation allows independent optimization of each channel region, improving electrical performance stability while managing device complexity through modular design
Solution Approach 2:
Different doping concentrations are applied to different regions: the first and second channel areas have one doping concentration, while the intermediate area between them has a different doping concentration. This local quality variation optimizes electrical characteristics in each region, enhancing overall device reliability
2Area of stationary object
If the channel width is increased to improve display area, then the aperture ratio increases, but the voltage retention capability deteriorates
Solution Approach 1:
The wide channel is segmented into first and second channel areas with different gates, allowing each segment to be optimized for specific functions. This enables maintaining a wide overall channel for high aperture ratio while creating controlled regions that improve voltage retention
Solution Approach 2:
Different doping concentrations are used in different regions of the active layer. The intermediate area between the two channel areas has a doping concentration different from the channel areas, which helps improve voltage retention capability while maintaining the overall channel width for high aperture ratio
Data Source
AI summary
Disclosed are a thin film transistor and a manufacturing method therefor, a displaying base plate and a displaying apparatus. The thin film transistor includes an active layer, a first insulating layer and a gate layer which are disposed in stack, wherein the active layer includes a source contact area, a drain contact area, and a channel area connecting the source contact area and the drain contact area; the channel area includes a first channel area, a first resistance area and a second channel area sequentially disposed in a first direction; the gate layer includes a first gate and a second gate which are separately disposed; an orthographic projection of the first gate on a plane where the active layer is located covers the first channel area; and an orthographic projection of the second gate on a plane where the active layer is located covers the second channel area.