Display Apparatus Bottom Metal Layer Transistor Integration

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Solution Overview

Problem

Existing display apparatuses face challenges in displaying high-quality images due to complex layered structures and difficulties in controlling light emission accurately.

Innovation Solution

A high-resolution display apparatus is designed with an organic light-emitting diode, a driving transistor, and a first bottom metal layer. The apparatus includes initialization transistors and emission control transistors, with semiconductor layers of different materials (silicon and oxide semiconductors) to enhance control over current flow and image quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the number of transistors electrically connected to one display element is increased to control light emission accurately, then the control precision is improved, but the device complexity increases

Engineering Contradiction:
Improvelight emission control precisionVSAvoidtransistor configuration complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent combines multiple transistor functions into a unified pixel circuit architecture where the driving transistor, initialization transistor, and emission control transistor work together in an integrated manner. The bottom metal layer serves as a common electrical connection structure for multiple transistors, merging the electrical pathways and reducing overall circuit complexity while maintaining precise control capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The bottom metal layer performs multiple functions simultaneously: it serves as an electrical connection for the driving transistor, provides initialization voltage pathways, and acts as an emission control structure. This multi-functionality reduces the need for separate dedicated structures for each function, thereby controlling complexity while achieving precise light emission control.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Manufacturing precision

If different semiconductor materials are used to enhance control over current flow, then the manufacturing precision is improved, but the device complexity increases

Engineering Contradiction:
Improvecurrent flow control precisionVSAvoidsemiconductor layer structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies different semiconductor materials in specific local regions: oxide semiconductor is used for the initialization transistor where low leakage current is critical, while silicon semiconductor is used for the driving transistor where high mobility is needed. This localized material selection optimizes current flow control in each specific function without requiring complex multi-material structures throughout the entire device.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The display apparatus achieves high-quality image display by precise control of current flow through the use of different semiconductor materials and transistor configurations, simplifying the layer structure and improving display performance.

Implementation Method 1

an organic light-emitting diode, a driving transistor configured to control an amount of current flowing from a second node to the organic light-emitting diode

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS20250040379A1Display apparatus
Publication Date: 2025.01.30 SAMSUNG DISPLAY CO LTD
  • US20250040379A1 patent drawing
  • US20250040379A1 patent drawing
  • US20250040379A1 patent drawing

AI summary

A display apparatus for a high-resolution display apparatus that configured to display a high-quality image includes an organic light-emitting diode, a driving transistor configured to control an amount of current flowing from a second node to the organic light-emitting diode according to a voltage applied to a first node, the second node being electrically connected to a power voltage line, and a first bottom metal layer disposed below the driving transistor and electrically connected to the driving transistor.