Display Bridge Line Layout to Prevent Touch Signal Interference

The bridge line is configured to extend in the first direction (horizontal) while the oxide-based active layer extends in the second direction (vertical), creating a spatial separation where the bridge line overlaps with the gate electrode rather than the active layer. This dimensional arrangement eliminates parasitic transistor formation while maintaining electrical connection reliability.

The gate electrode serves as an intermediary structure that the bridge line overlaps with, allowing the bridge line to be positioned away from the oxide-based active layer. This intermediary arrangement prevents direct contact between the bridge line and active layer, thereby preventing parasitic transistor formation while still enabling proper electrical connections through the gate electrode pathway.

Instead of moving the bridge line away in the vertical direction (increasing distance), the bridge line is reconfigured to extend horizontally in the first direction and overlap with the gate electrode. This dimensional change maintains a short connection path while achieving separation from the harmful oxide-based active layer region.

The bridge line serves multiple functions: it provides electrical connection for data signals while simultaneously overlapping with the gate electrode to avoid parasitic transistor formation. This multi-functional configuration allows the same structure to achieve both electrical connectivity and parasitic prevention without requiring additional components or increased length.

The bridge line is configured to overlap with the gate electrode in the horizontal direction rather than vertically overlapping with the oxide-based active layer. This dimensional reconfiguration simplifies the layout by maintaining a planar structure while eliminating parasitic transistor formation, thus preserving touch sensing accuracy without increasing device complexity.

The bridge line is specifically positioned to overlap only with the gate electrode region, creating a localized configuration that avoids the oxide-based active layer. This local quality adjustment allows the bridge line to maintain simple layout connectivity in the gate electrode area while preventing parasitic transistor formation in the active layer area, thereby preserving touch sensing reliability.