Display Transistor-Capacitor Layout to Limit Hydrogen Diffusion
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Solution Overview
Problem
Existing display devices face challenges in achieving optimal electrical connections and structural integrity while minimizing hydrogen content variations, which can affect performance and reliability.
Innovation Solution
A display device design incorporating a transistor with a gate electrode overlapping a channel region, a storage capacitor with connected capacitor electrodes, and a conductive pattern using the same material as the gate electrode, along with a connection layer having varying hydrogen content portions, and a conductive pattern with specific vertical thickness and positioning relative to the gate electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional transistor and capacitor structure is used in display devices, then the device can be manufactured with standard processes, but the electrical reliability and operational stability are insufficient due to hydrogen diffusion and poor structural integrity
Solution Approach 1:
The gate electrode and conductive pattern are merged into a single continuous structure that extends from the transistor gate to the capacitor electrode, eliminating the need for separate connection layers and reducing hydrogen diffusion pathways while maintaining electrical reliability
Solution Approach 2:
The gate electrode serves multiple functions: it acts as the control electrode for the transistor, provides structural support, and functions as part of the capacitor electrode structure, thereby simplifying the overall device architecture while improving reliability
2Reliability
If the gate electrode and conductive pattern are made from different materials or structures, then manufacturing flexibility is maintained, but hydrogen diffusion occurs at interfaces reducing electrical reliability
Solution Approach 1:
The gate electrode and conductive pattern are formed as a single continuous structure using the same material and deposition process, eliminating material interfaces where hydrogen diffusion could occur while maintaining manufacturing feasibility through standard thin-film deposition techniques
3Ease of manufacture
If separate connection layers are used to connect capacitor and transistor components, then manufacturing flexibility is improved, but structural integrity is reduced and hydrogen diffusion increases
Solution Approach 1:
The separate connection layer is eliminated by merging the gate electrode and conductive pattern into a single continuous structure, thereby improving structural integrity and reducing hydrogen diffusion pathways while maintaining electrical connectivity
Solution Approach 2:
The unified conductive structure performs multiple functions simultaneously: it serves as the transistor gate electrode, provides structural support, and acts as the capacitor electrode, eliminating the need for separate connection layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances electrical connectivity and structural stability, reducing hydrogen-related issues and improving overall device performance and reliability.
Implementation Method 1
A hydrogen content of the first portion may be greater than a hydrogen content of the second portion
Data Source
AI summary
A display device includes a transistor including an active layer and a gate electrode which overlaps a channel region of the active layer and includes at least one layer, a storage capacitor which includes a first capacitor electrode which is electrically connected to the transistor and disposed below the active layer and a second capacitor electrode over the first capacitor electrode, a connection layer connecting the second capacitor electrode and the active layer to each other, and a conductive pattern disposed between the storage capacitor and the transistor and including a material identical to a material of the at least one layer of the gate electrode.